Plasmatherm 790/Processes/m pary1

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About this Process
Process Details
Equipment	Plasmatherm 790
Technology	RIE
Material	Parylene
Mask Materials	Photoresist
Gases Used	O2

m_pary1 is an O₂ etch that can be used for parylene and other polymers.

Parameters

Parameter	Etch
RF Power	105 W
Pressure	100 mTorr
O2 Flow	99 sccm

Capabilities

Etch Rate

• Parylene Etch Rate: 2000 Å/min
• SPR 220: 2000 Å/min
• PDMS: XXX Å/min

Mask Selectivity

• Si Etch Rate: <5 Å/min
• SiO2 Etch Rate: <5 Å/min

Sidewall Profile

• Undercut: XXX

Limitations

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Qualification

Once a month m_pary1 is run on a XXX. This etch rate is reported in the chart below.

Then occasionally the recipe is tested on other materials as shown below.