Plasmatherm 790/Processes/m pary1

From LNF Wiki
< Plasmatherm 790‎ | Processes
Revision as of 11:03, 18 August 2021 by Wrightsh (talk | contribs) (→‎Capabilities)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

m_pary1 is an O2 etch that can be used for parylene and other polymers.

About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material Parylene
Mask Materials Photoresist
Gases Used O2


Parameter Etch
RF Power 105 W
Pressure 100 mTorr
O2 Flow 99 sccm


Etch Rate

Mask Selectivity

  • Si Etch Rate: <5 Å/min
  • SiO2 Etch Rate: <5 Å/min


The limitations for this recipe are still being defined.