Difference between revisions of "Plasmatherm 790/Processes/m si o 1"

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==Limitations==
 
==Limitations==
 
The limitations for this recipe are still being defined.
 
The limitations for this recipe are still being defined.
 
==Qualification==
 
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
 
Every other Thursday m_si_o_1 is run for 5 minutes on a 100 mm (4") [[Silicon_dioxide|SiO<sub>2</sub>]] wafer.  This etch rate is reported in the chart below.
 
 
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|url=https://docs.google.com/spreadsheets/d/1jDSV00jZ-1vppt2MgGRAJyXRvxEE3rJIlXtngODM9-0/pubchart?oid=947675517&amp;format=interactive   
 
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Revision as of 10:40, 15 February 2018

This is a basic oxide etch with a relatively slow etch rate.

About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material SiO2
Mask Materials PR
Gases Used CHF3, CF4


Parameters

Parameter Etch
RF Power 150 W
Pressure 20 mTorr
CF4 Flow 15 sccm
CHF3 Flow 15 sccm

Capabilities

Etch Rate

  • SiO2 Etch Rate
    • Thermal oxide/HTO: 190 Å/min
    • Plasmatherm 790 L_OX200: 238 Å/min

Mask Selectivity

  • Photoresist Etch Rate

Sidewall Profile

  • Undercut: ?

Limitations

The limitations for this recipe are still being defined.