Difference between revisions of "Plasmatherm 790/Processes/m si o 1"

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Line 42: Line 42:
 
* Photoresist Etch Rate
 
* Photoresist Etch Rate
 
** [[SPR 220]]: 100 Å/min
 
** [[SPR 220]]: 100 Å/min
 
===Sidewall Profile===
 
* Undercut: ?
 
  
 
==Limitations==
 
==Limitations==
 
The limitations for this recipe are still being defined.
 
The limitations for this recipe are still being defined.

Latest revision as of 13:56, 18 October 2019

This is a basic oxide etch with a relatively slow etch rate.

About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material SiO2
Mask Materials PR
Gases Used CHF3, CF4


Parameters

Parameter Etch
RF Power 150 W
Pressure 20 mTorr
CF4 Flow 15 sccm
CHF3 Flow 15 sccm

Capabilities

Etch Rate

  • SiO2 Etch Rate
    • Thermal oxide/HTO: 190 Å/min
    • Plasmatherm 790 L_OX200: 238 Å/min

Mask Selectivity

  • Photoresist Etch Rate

Limitations

The limitations for this recipe are still being defined.