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This is a basic oxide etch with a relatively slow etch rate.

About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material SiO2
Mask Materials PR
Gases Used CHF3, CF4



Parameter Etch
RF Power 150 W
Pressure 20 mTorr
CF4 Flow 15 sccm
CHF3 Flow 15 sccm


Etch Rate

  • SiO2 Etch Rate
    • Thermal oxide/HTO: 190 Å/min
    • Plasmatherm 790 L_OX200: 238 Å/min

Mask Selectivity

  • Photoresist Etch Rate


The limitations for this recipe are still being defined.