Difference between revisions of "Reactive ion etching"
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{{quote|text=Reactive-ion etching (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.|source=[[wikipedia:Reactive-ion_etching|Wikipedia]]}} | {{quote|text=Reactive-ion etching (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.|source=[[wikipedia:Reactive-ion_etching|Wikipedia]]}} | ||
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Revision as of 14:11, 29 April 2014
Reactive-ion etching (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.
