Difference between revisions of "Reactive ion etching"

From LNF Wiki
Jump to navigation Jump to search
Line 34: Line 34:
 
==Equipment==
 
==Equipment==
 
Below is a general description of the RIE equipment at the LNF.  For a complete list, please see [[:Category:RIE equipment|list of RIE equipment]].
 
Below is a general description of the RIE equipment at the LNF.  For a complete list, please see [[:Category:RIE equipment|list of RIE equipment]].
 +
 +
===P5000 RIE===
 +
{{main|P5000 RIE}}
 +
 +
The P5000 is a 3 chamber tool designed for production etching.  Chambers A and B are configured for SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> etching, where as chamber C is configured for polysilicon and amorphous silicon etching. 
 +
 +
 +
===STS APS DGRIE===
 +
{{main|STS Glass Etcher}}
 +
 +
The glass etcher excels at deep etching of [[Fused silica|fused silica]] but it also has a nearly vertical SiO<sub>2</sub> etch. 
 +
  
 
===LAM 9400 SE===
 
===LAM 9400 SE===
Line 39: Line 51:
  
 
The LAM 9400 SE is an [[ICP]] etcher configured with a wide range of gas chemistries.  It is mainly used to etch [[polysilicon]] but can also etch [[silicon dioxide|SiO<sub>2</sub>]], [[silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[compound semiconductors]], some [[Reactive metals|metals]], and [[polymers|organic]] materials.
 
The LAM 9400 SE is an [[ICP]] etcher configured with a wide range of gas chemistries.  It is mainly used to etch [[polysilicon]] but can also etch [[silicon dioxide|SiO<sub>2</sub>]], [[silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[compound semiconductors]], some [[Reactive metals|metals]], and [[polymers|organic]] materials.
 +
  
 
===Plasmatherm 790===
 
===Plasmatherm 790===
 
{{main|Plasmatherm 790}}
 
{{main|Plasmatherm 790}}
 +
 +
The Plasmatherm is configured with a variety of gases so that it can etch a wide array of materials.  Most recipes tend to have slow etch rates on the order of 200 Å/min which is ideal for very thin films.  The tool also has almost no material restrictions to allow it to process as many things as possible.
  
 
===Complete tool list===
 
===Complete tool list===

Revision as of 08:29, 27 August 2015

Reactive ion etching
Rieoperation.svg
Technology Details
Other Names RIE
Technology Plasma etching
Equipment List of RIE equipment

Reactive ion etching (RIE) is a high resolution mechanism for etching materials using reactive gas discharges. It is a highly controllable process that can process a wide variety of materials, including semiconductors, dielectrics and some metals. One major advantage to RIE over other forms of etching is that the process can be designed to be highly anisotropic, allowing for much finer resolution and higher aspect ratios. For a detailed overview of RIE, please review the technology workshop.


Method of operation

Samples are first masked by one of many patterning processes. They are then placed into a vacuum chamber. Gases are introduced into the chamber and then activated by RF or microwave power to create a plasma consisting of a wide variety of reactive species, ions, and electrons. The reactive species are chosen for their ability to react chemically with the material being etched. A negative DC bias is induced at the substrate by the free electrons which accelerates the ions towards the sample surface. The energy imparted by these ions reaching the surface greatly enhances the effectiveness of the chemical reaction and provides directionality to the etch. Generally some form of passivating component is incorporated such that the etch proceeds only where energetic ions strike the surface.

Parameters

Many of the same parameters used in plasma etching apply to RIE, including pressure, gas composition, and generator power. Of particular importance is the plasma generation method (commonly a parallel plate or ICP configuration), as they have different advantages depending on the material being etched.

DC bias

A critical parameter specific to RIE is the DC bias applied to the sample, which directly affects the physicality of the etch. Many materials (e.g. SiO2) require high activation energy to react with the gases in the reactor. Other materials (silicon, in particular) may be etched using a passivating component which must be removed on the surface being etched. Still other materials have little to no reactivity and must be physically removed from the surface.

In most reactors, DC bias is not controlled directly, but will depend on the conductance of the plasma and the power applied to the sample.

Deep reactive ion etching

Deep reactive ion etching (DRIE), while often referring specifically to the Bosch process, generally is any RIE used to etch high aspect ratio (> 10:1) features. This may be simply a longer, well controlled RIE etch, or may use a specific process such as cryogenic etching or the Bosch process. For all DRIE equipment at the LNF, please refer to the list of DRIE equipment.

Materials

RIE can be used to etch a wide variety of materials, including dielectrics, semiconductors, polymers, and some metals. For information on etching specific materials, please review the sections below.

Dielectric etching

not sure if I like where this is going...

Equipment

Below is a general description of the RIE equipment at the LNF. For a complete list, please see list of RIE equipment.

P5000 RIE

Main article: P5000 RIE

The P5000 is a 3 chamber tool designed for production etching. Chambers A and B are configured for SiO2 and Si3N4 etching, where as chamber C is configured for polysilicon and amorphous silicon etching.


STS APS DGRIE

Main article: STS Glass Etcher

The glass etcher excels at deep etching of fused silica but it also has a nearly vertical SiO2 etch.


LAM 9400 SE

Main article: LAM 9400

The LAM 9400 SE is an ICP etcher configured with a wide range of gas chemistries. It is mainly used to etch polysilicon but can also etch SiO2, Si3N4, compound semiconductors, some metals, and organic materials.


Plasmatherm 790

Main article: Plasmatherm 790

The Plasmatherm is configured with a variety of gases so that it can etch a wide array of materials. Most recipes tend to have slow etch rates on the order of 200 Å/min which is ideal for very thin films. The tool also has almost no material restrictions to allow it to process as many things as possible.

Complete tool list

See also

Notes

<footnotes>

References

<citations>

Further reading