Difference between revisions of "SPR 220"

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==Processes==
 
==Processes==
* There are currently no processes defined that use this chemical.
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The ability to focus an image into the sample is proportional to the distance from the focal plane (depth of focus), and the amount of diffraction of the light. Both of these parameters are proportional to the wavelength of the light. The amount of diffraction is proportional to the wavelength, therefore to resolve finer features, shorter wavelengths are required. However, with shorter wavelengths the depth of focus is also lower, minimizing the amount of topology on the surface that is acceptable.
===Exposure===
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===Post Exposure Bake===
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There are a series of steps that are common to all types of optical lithography
115C 90s contact hot plate
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#Sample preparation
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#*Surface cleaning
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#*Dehydration
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#*Adhesion promoter
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#Photoresist application and soft bake
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#Exposure
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#Post exposure bake (PEB) (necessary with some resists)
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#Development
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#Hard bake (necessary with some resists)
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#Plasma descum
  
===Develop===
 
 
{| class="wikitable" border="1"
 
{| class="wikitable" border="1"
 
!colspan="7"|SPR 220 (3.0)
 
!colspan="7"|SPR 220 (3.0)

Revision as of 11:14, 2 March 2017

Warning Warning: This page has not been released yet.

SPR 220 is a photoresist used for XYZ

Processes

The ability to focus an image into the sample is proportional to the distance from the focal plane (depth of focus), and the amount of diffraction of the light. Both of these parameters are proportional to the wavelength of the light. The amount of diffraction is proportional to the wavelength, therefore to resolve finer features, shorter wavelengths are required. However, with shorter wavelengths the depth of focus is also lower, minimizing the amount of topology on the surface that is acceptable.

There are a series of steps that are common to all types of optical lithography

  1. Sample preparation
    • Surface cleaning
    • Dehydration
    • Adhesion promoter
  2. Photoresist application and soft bake
  3. Exposure
  4. Post exposure bake (PEB) (necessary with some resists)
  5. Development
  6. Hard bake (necessary with some resists)
  7. Plasma descum
SPR 220 (3.0)
Photoresist Spin Speed Exposure Develop
Thickness GCA AS200 AutoStep Contact Lithography CEE Developer Recipe ACS 200 Recipe
875 rpm 5.0 μm 0.35s - 0.5s 10s - 13s 80-80 DP MF300 dev 50s
1000 rpm 4.7 μm 0.35s - 0.45s 10s - 12s 70-70 DP MF300 dev 50s
2000 rpm 4.0 μm 40-40 DP MF300 dev 40s
3000 rpm 3.25 μm 0.25s - 3.5s 5.5s - 7s 30-30 DP MF300 dev 40s
4000 rpm 2.75 μm .20 - .30s 4.5s - 6.5s 60 SP MF300 dev 40s
5000 rpm 2.6 μm .20s - 0.3s 4.0 - 6.0s 60 SP MF300 dev 30s
Photoresist Spin Speed SPR 220 (7.0)
Thickness CEE Developer Recipe
875 rpm 5.0 μm 80-80 DP
1000 rpm 5.0 μm 70-70 DP
2000 rpm 5.0 μm 40-40 DP
3000 rpm 5.0 μm 30-30 DP
4000 rpm 5.0 μm 60 SP
5000 rpm 5.0 μm 60 SP

Process SOPs

  • There are currently no process SOPs defined for this chemical.

Equipment

  • There are currently no equipment defined that use this chemical.

Technical Data Sheet

  • There are currently no data sheets for this chemical.

Safety Data Sheet

  • There are currently no Safety Data Sheets (SDSes) for this chemical.

References

  • Other links that are useful