Difference between revisions of "SPR 220"

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==Processes==
 
The ability to focus an image into the sample is proportional to the distance from the focal plane (depth of focus), and the amount of diffraction of the light. Both of these parameters are proportional to the wavelength of the light. The amount of diffraction is proportional to the wavelength, therefore to resolve finer features, shorter wavelengths are required. However, with shorter wavelengths the depth of focus is also lower, minimizing the amount of topology on the surface that is acceptable.
 
 
There are a series of steps that are common to all types of optical lithography
 
#Sample preparation
 
#*Surface cleaning
 
#*Dehydration
 
#*Adhesion promoter
 
#Photoresist application (see below for some thicknesses) and soft bake
 
#Exposure (see below)
 
#Rest time between exposure and post exposure bake
 
#Post exposure bake (PEB)  at 115C for 90s
 
#Development (see below)
 
#*Note: Never hard bake SPR 220
 
#Plasma descum
 
 
{| class="wikitable" border="1"
 
!colspan="8"|SPR 220 (3.0)
 
|-
 
! rowspan="2"|Photoresist Spin Speed
 
!rowspan="2"|Thickness
 
! colspan="2"|Exposure
 
!Rest time
 
!PEB
 
! colspan="2"|Develop
 
|-
 
![[GCA AS200 AutoStep]]
 
!Contact Lithography
 
!Minutes
 
!115C
 
! [[CEE Developer 1|CEE Developer Recipe]]
 
![[ACS 200 cluster tool|ACS 200 Recipe]]
 
|-
 
| 875 rpm
 
| 5.0 μm
 
|0.35s - 0.5s
 
| 10s - 13s
 
| 10
 
| 120s
 
| 80-80 DP
 
|AZ300 dev 50s
 
|-
 
| 1000 rpm
 
|4.7 μm
 
|0.35s - 0.45s
 
| 10s - 12s
 
|10
 
|120s
 
| 70-70 DP
 
|AZ300 dev 50s
 
|-
 
| 2000 rpm
 
| 4.0 μm
 
|
 
|
 
| 5
 
|90s
 
| 40-40 DP
 
|AZ300 dev 40s
 
|-
 
| 3000 rpm
 
| 3.25 μm
 
|0.25s - 0.35s
 
|5.5s - 7s
 
|0
 
|90s
 
| 30-30 DP
 
|AZ300dev 40s
 
|-
 
| 4000 rpm
 
| 2.75 μm
 
|0.20s - 0.30s
 
|4.5s - 6.5s
 
|0
 
|90s
 
| 60 SP
 
|AZ300 dev 40s
 
|-
 
| 5000 rpm
 
| 2.6 μm
 
| 0.20s - 0.3s
 
|4.0 - 6.0s
 
|0
 
|90s
 
| 60 SP
 
|AZ300 dev 30s
 
|}
 
{| class="wikitable" border="1"
 
!colspan="8"|SPR 220 (7.0)
 
|-
 
! rowspan="2"|Photoresist Spin Speed
 
!rowspan="2"|Thickness
 
! colspan="2"|Exposure
 
!Rest time
 
!PEB
 
! colspan="2"|Develop
 
|-
 
![[GCA AS200 AutoStep]]
 
!Contact Lithography
 
!Minutes
 
!115C
 
! [[CEE Developer 1|CEE Developer Recipe]]
 
![[ACS 200 cluster tool|ACS 200 Recipe]]
 
|-
 
| 875 rpm
 
| 12.0 μm
 
|
 
|
 
|
 
|
 
|
 
|
 
|-
 
| 1000 rpm
 
| 11.0 μm
 
|
 
|
 
|
 
|
 
|
 
|
 
|-
 
| 2000 rpm
 
| 9.0 μm
 
|
 
|
 
|
 
|
 
|
 
|
 
|-
 
| 3000 rpm
 
| 7.5 μm
 
|
 
| 20s
 
| 35 min
 
| 90s
 
|
 
| AZ300 150s
 
|-
 
| 4000 rpm
 
| 6.5 μm
 
|
 
|
 
|
 
|
 
|
 
|
 
|-
 
| 5000 rpm
 
| 6.0 μm
 
|
 
|
 
|
 
|
 
|
 
|
 
|}
 
 
===Process SOPs===
 
* There are currently no process SOPs defined for this chemical.
 
  
 
==Equipment==
 
==Equipment==

Revision as of 18:10, 11 September 2018

Warning Warning: This page has not been released yet.

SPR 220 is our most commonly used photoresist, especially for RIE.


3µm - SPR 220 (3.0)

Process

  1. Dehydrate and apply HMDS
  2. Spin
  3. Bake 115°C for 90sec
  4. Wait 5 min
  5. Expose
    • Stepper
      • Silicon - 0.40 sec
      • Aluminum (high reflection) - XXX
      • Low Reflection - 0.42 sec
    • Aligner - 7 sec
  1. Wait 5 min
  2. Bake 115°C for 90sec
  3. Develop
    • ACS - AZ300 - 30sec
    • CEE - AZ726 30-30DP

Characterization

Stepper

Gratings

SPR220 3um stepper grating silicon.jpg
SPR220 3um stepper grating aluminum.jpg
SPR220 3um stepper grating low reflection.jpg

Trenches

SPR220 3um stepper trench 1um.jpg
SPR220 3um stepper trench 700nm.jpg

Contact Aligner

5µm of SPR 220 (3.0)

Equipment

  • There are currently no equipment defined that use this chemical.

Technical Data Sheet

Safety Data Sheet

  • There are currently no Safety Data Sheets (SDSes) for this chemical.

References