Difference between revisions of "SPR 220"
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| Line 24: | Line 24: | ||
# Develop | # Develop | ||
#* ACS - AZ300 - 30sec | #* ACS - AZ300 - 30sec | ||
| − | #* CEE - AZ726 | + | #* CEE - AZ726 40-40DP |
===Characterization=== | ===Characterization=== | ||
Revision as of 18:35, 11 September 2018
 Warning: | This page has not been released yet. |
SPR 220 is our most commonly used photoresist, especially for RIE.
Contents
3µm - SPR 220 (3.0)
Process
- Dehydrate and apply HMDS
- Spin
- Bake 115°C for 90 sec
- Wait 5 min
- Expose
- Stepper
- Silicon - 0.40 sec
- Aluminum (~90% reflection) - 0.34 sec
- ~15% reflection - 0.42 sec
- Aligner - 7 sec (silicon)
- Stepper
- Wait ≥6 min
- Bake 115°C for 90 sec
- Develop
- ACS - AZ300 - 30sec
- CEE - AZ726 40-40DP
Characterization
Stepper
| Minimum Feature Size | |
|---|---|
| Grating | 700nm |
| Line | ?? |
| Trench | 1µm |
| Hole | ?? |
| Pillar | ??nm |
Gratings with equal duty cycle.
Free standing trenches.
Contact Aligner
~2µm minimum feature size, but this is partially limited by the mask maker.
5µm of SPR 220 (3.0)
Equipment
- There are currently no equipment defined that use this chemical.
Technical Data Sheet
Safety Data Sheet
- There are currently no Safety Data Sheets (SDSes) for this chemical.
