Difference between revisions of "SPR 220"
Jump to navigation
Jump to search
| Line 20: | Line 20: | ||
#** ~15% reflection - 0.42 sec | #** ~15% reflection - 0.42 sec | ||
#* Aligner - 7 sec (silicon) | #* Aligner - 7 sec (silicon) | ||
| − | # Wait | + | # Wait ≥3 min |
# Bake 115°C for 90 sec | # Bake 115°C for 90 sec | ||
# Develop | # Develop | ||
| Line 83: | Line 83: | ||
===5µm of SPR 220 (3.0)=== | ===5µm of SPR 220 (3.0)=== | ||
| − | |||
==Technical Data Sheet== | ==Technical Data Sheet== | ||
* [https://drive.google.com/file/d/0B7eVu3mcqumAamhfcFFyRUxtRTA/view?usp=sharing| Data Sheet] | * [https://drive.google.com/file/d/0B7eVu3mcqumAamhfcFFyRUxtRTA/view?usp=sharing| Data Sheet] | ||
Revision as of 10:22, 12 September 2018
 | This page is currently being expanded. |
SPR 220 is our most commonly used photoresist, especially for RIE. The lab stocks SPR 220 (3.0) for general use, in the ACS 200 Cluster Tool, and in the CEE 200X #1 & #2. For films thicker then 5µm SPR 220 (7.0) is also available from the LNF Store.
Contents
3µm - SPR 220 (3.0)
Process
- Dehydrate and apply HMDS
- Spin
- Bake 115°C for 90 sec
- Wait ≥5 min
- Expose
- Stepper
- Silicon - 0.40 sec
- Aluminum (~90% reflection) - 0.34 sec
- ~15% reflection - 0.42 sec
- Aligner - 7 sec (silicon)
- Stepper
- Wait ≥3 min
- Bake 115°C for 90 sec
- Develop
- ACS - AZ300 - 30 sec
- CEE - AZ726 40-40 DP
Characterization
Stepper
| Minimum Feature Size | |
|---|---|
| Grating | 700 nm |
| Line | ?? |
| Trench | 1 µm |
| Hole | ?? |
| Pillar | ?? nm |
Gratings with equal duty cycle.
Free standing trenches.
Free standing lines.
- TODO
Holes
- TODO
Pillars
- TODO
Focus should be kept at 0.
Puddle vs Spray Develop
- TODO
Spray develop time:
Contact Aligner
~2µm minimum feature size, but this is partially limited by the mask maker.
