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SPR 220 is our most commonly used photoresist, especially for RIE. The lab stocks SPR 220 (3.0) for general use, in the ACS 200 Cluster Tool, and in the CEE 200X #1 & #2. For films thicker then 5µm SPR 220 (7.0) is also available from the LNF Store.


Contents

3µm - SPR 220 (3.0)

Process

  1. Dehydrate and apply HMDS
  2. Spin
    • ACS - SPR 220 3.0 3um recipe
    • CEE 2OOX PR Spinner 1,2 - SPR 220 3.0 3um recipe
  3. Bake 115°C for 90 sec
  4. Wait ≥5 min
  5. Expose
    • Stepper
      • Silicon - 0.40 sec
      • Aluminum (~90% reflection) - 0.34 sec
    • Aligner - 7 sec (silicon)
  6. Wait ≥3 min
  7. Bake 115°C for 90 sec
  8. Develop
    • ACS - AZ300 - 30 sec
    • CEE - AZ726 30-30 DP

Characterization

Stepper

Minimum Feature Size
Grating 700 nm
Line ??
Trench 1 µm
Hole ??
Pillar ?? nm

Gratings with equal duty cycle.

   

Free standing trenches.

   

Free standing lines.

  1. TODO

Holes

  1. TODO

Pillars

  1. TODO

Focus should be kept at 0.

 

Puddle vs Spray Develop

  1. TODO

Spray develop time:  

Contact Aligner

~2µm minimum feature size, but this is partially limited by the mask maker.

 

5µm of SPR 220 (3.0)

Process

  1. Dehydrate and apply HMDS
  2. Spin
    • ACS 200 Cluster Tool - SPR 220 3.0 5um recipe
    • CEE 200X PR Spinner 1,2 - SPR 220 3.0 5um recipe
  3. Bake 2 minutes (120 seconds) at 115°C with a 30 second stepdown
  4. Wait ≥ ?? min
  5. Expose
    • Stepper
      • Silicon - 0.75 seconds
      • Aluminum (~90% reflection) - ??
      • ~15% reflection - ??
    • Aligner -11 sec (silicon)
  6. Wait ≥ ?? min
  7. Bake 115°C for 90 sec
  8. Develop
    • ACS - AZ300 - ?? sec
    • CEE - AZ726 ??

Characterization

Stepper

Contact Aligner

10µm - SPR 220 (7.0)

SPR 220 7.0 process and development information can be found on the SPR 220 7.0 page.

Technical Data Sheet