SPR 220

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SPR 220 is our most commonly used photoresist, especially for RIE.

3µm - SPR 220 (3.0)

Process

1. Dehydrate and apply HMDS
2. Spin
3. Bake 115°C for 90 sec
4. Wait 5 min
5. Expose
   • Stepper
     • Silicon - 0.40 sec
     • Aluminum (~90% reflection) - 0.34 sec
     • ~15% reflection - 0.42 sec
   • Aligner - 7 sec (silicon)
6. Wait ≥6 min
7. Bake 115°C for 90 sec
8. Develop
   • ACS - AZ300 - 30sec
   • CEE - AZ726 40-40DP

Characterization

Stepper

Minimum Feature Size
Grating	700nm
Line	??
Trench	1µm
Hole	??
Pillar	??nm

Gratings with equal duty cycle.

Free standing trenches.

Free standing lines.

1. TODO

Holes

1. TODO

Pilars

1. TODO

Focus should be kept at 0.

Puddle vs Spray Develop

1. TODO

Spray develop time:

Contact Aligner

~2µm minimum feature size, but this is partially limited by the mask maker.

Equipment

• There are currently no equipment defined that use this chemical.

Technical Data Sheet

• Data Sheet

Safety Data Sheet

• There are currently no Safety Data Sheets (SDSes) for this chemical.