SPR 220

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SPR 220 is our most commonly used photoresist, especially for RIE.


3µm - SPR 220 (3.0)

Process

  1. Dehydrate and apply HMDS
  2. Spin
  3. Bake 115°C for 90 sec
  4. Wait ≥5 min
  5. Expose
    • Stepper
      • Silicon - 0.40 sec
      • Aluminum (~90% reflection) - 0.34 sec
      • ~15% reflection - 0.42 sec
    • Aligner - 7 sec (silicon)
  6. Wait ≥6 min
  7. Bake 115°C for 90 sec
  8. Develop
    • ACS - AZ300 - 30sec
    • CEE - AZ726 40-40DP

Characterization

Stepper

Minimum Feature Size
Grating 700nm
Line ??
Trench 1µm
Hole ??
Pillar ??nm

Gratings with equal duty cycle.

SPR220 3um stepper grating silicon.jpg SPR220 3um stepper grating aluminum.jpg SPR220 3um stepper grating low reflection.jpg

Free standing trenches.

SPR220 3um stepper trench 1um.jpg SPR220 3um stepper trench 700nm.jpg

Free standing lines.

  1. TODO

Holes

  1. TODO

Pillars

  1. TODO

Focus should be kept at 0.

SPR220 3um stepper focus.jpg

Puddle vs Spray Develop

  1. TODO

Spray develop time: SPR220 3um develop time.jpg

Contact Aligner

~2µm minimum feature size, but this is partially limited by the mask maker. SPR220 3um aligner grating silicon.jpg

5µm of SPR 220 (3.0)

Equipment

  • There are currently no equipment defined that use this chemical.

Technical Data Sheet

Safety Data Sheet

  • There are currently no Safety Data Sheets (SDSes) for this chemical.

References