Difference between revisions of "SPR 220 7.0"
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| Line 7: | Line 7: | ||
=Process= | =Process= | ||
# Dehydrate and apply HMDS | # Dehydrate and apply HMDS | ||
| − | # | + | # [[CEE 200X photoresist spinner 1]], 10um recipe |
| − | # | + | # Soft bake |
| − | #* | + | #* 2 Hotplates - 30 seconds @ 90°C, 6 minutes (360 seconds) at 115°C. Move quickly between hotplates to wafer does not cool. |
#* Let sample cool in a cassette or somewhere it can cool slowly. NOT on cold metal table. | #* Let sample cool in a cassette or somewhere it can cool slowly. NOT on cold metal table. | ||
# Wait ≥ 20 min | # Wait ≥ 20 min | ||
# Expose | # Expose | ||
| − | #* | + | #* MA/BA 6 - Aligner -26 sec (silicon) |
| − | |||
| − | |||
| − | |||
| − | |||
# Wait ≥60 min | # Wait ≥60 min | ||
# Bake 115°C for ?? | # Bake 115°C for ?? | ||
| + | #*2 Hotplates - 30 seconds @ 90°C, 3 minutes (180 seconds) at 115°C. Move quickly between hotplates to wafer does not cool. | ||
#*Let sample cool in a cassette or somewhere it can cool slowly. NOT on cold metal table. | #*Let sample cool in a cassette or somewhere it can cool slowly. NOT on cold metal table. | ||
# Develop | # Develop | ||
| − | #* ACS - AZ300 - | + | #* ACS - AZ300 - ?? sec |
#* CEE - AZ726 DP 80-80 sec | #* CEE - AZ726 DP 80-80 sec | ||
Revision as of 10:32, 16 March 2020
 | This page is currently being expanded. |
SPR 220 is our most commonly used photoresist, especially for RIE. The lab stocks SPR 220 (3.0) for general use, in the ACS 200 cluster tool, and in the CEE 200X photoresist spinner 2. For films thicker then 5µm SPR 220 (7.0) is also available from the LNF Store and in the CEE 200X photoresist spinner 1.
Process
- Dehydrate and apply HMDS
- CEE 200X photoresist spinner 1, 10um recipe
- Soft bake
- 2 Hotplates - 30 seconds @ 90°C, 6 minutes (360 seconds) at 115°C. Move quickly between hotplates to wafer does not cool.
- Let sample cool in a cassette or somewhere it can cool slowly. NOT on cold metal table.
- Wait ≥ 20 min
- Expose
- MA/BA 6 - Aligner -26 sec (silicon)
- Wait ≥60 min
- Bake 115°C for ??
- 2 Hotplates - 30 seconds @ 90°C, 3 minutes (180 seconds) at 115°C. Move quickly between hotplates to wafer does not cool.
- Let sample cool in a cassette or somewhere it can cool slowly. NOT on cold metal table.
- Develop
- ACS - AZ300 - ?? sec
- CEE - AZ726 DP 80-80 sec
