Difference between revisions of "SPR 220 7.0"

From LNF Wiki
Jump to navigation Jump to search
Line 29: Line 29:
 
==Exposure==
 
==Exposure==
  
==Wait time Exposure==
+
==Wait time Exposure to Post Exposure Bake==
  
 
==Post Exposure Bake==
 
==Post Exposure Bake==

Revision as of 13:05, 24 March 2020

SPR 220 is our most commonly used photoresist, especially for RIE. The lab stocks SPR 220 (3.0) for general use, in the ACS 200 cluster tool, and in the CEE 200X photoresist spinner 2. For films thicker then 5µm SPR 220 (7.0) is also available from the LNF Store and in the CEE 200X photoresist spinner 1.

Process

  1. Dehydrate and apply HMDS
  2. CEE 200X photoresist spinner 1, 10um recipe
  3. Soft bake
    • Use 2 Hotplates - 30 seconds @ 90°C, 6 minutes (360 seconds) at 115°C. Move quickly between hotplates to wafer does not cool.
    • Let sample cool in a cassette or somewhere it can cool slowly. NOT on cold metal table.
  4. Wait ≥ 20 min
  5. Expose
    • MA/BA 6 - Aligner -26 sec (silicon)
  6. Wait ≥60 min
  7. Bake 115°C for
    • Use 2 Hotplates - 30 seconds @ 90°C, 3 minutes (180 seconds) at 115°C. Move quickly between hotplates to wafer does not cool.
    • Let sample cool in a cassette or somewhere it can cool slowly. NOT on cold metal table.
  8. Develop
    • ACS - AZ300 - ?? sec
    • CEE - AZ726 DP 80-80 sec

Characterization

Softbake

Wait time after Softbake

Exposure

Wait time Exposure to Post Exposure Bake

Post Exposure Bake

PEB matrix2.jpg

Develop

Developer Matrix, 4um.jpg

Troubleshooting

Bubbles in resist after spinning

Cracking Resist

Small bubbles form during DRIE

Resist peeling during DRIE