Difference between revisions of "STS APS DGRIE/Processes"
Jump to navigation
Jump to search
| Line 6: | Line 6: | ||
* [[{{FULLPAGENAME}}/Fused silica etch|Fused Silica Etch]] | * [[{{FULLPAGENAME}}/Fused silica etch|Fused Silica Etch]] | ||
*: Deep glass/fused silica etching, ~5000Å/min | *: Deep glass/fused silica etching, ~5000Å/min | ||
| + | * [[{{FULLPAGENAME}}/LNF_Polymer|LNF_Polymer]] | ||
| + | *: For etching polymers like polyimide ~920nm/min | ||
| + | |||
| + | |||
[[Category:RIE processes]] | [[Category:RIE processes]] | ||
[[Category:DRIE processes]] | [[Category:DRIE processes]] | ||
Latest revision as of 19:05, 22 November 2020
The primary recipes for the STS APS DGRIE are used for deep oxide/quartz/silica etching. The uk submicron etch is designed for thin-film (up to 8 μm) etching of oxide. Feature sizes can range from 100 nm to a full wafer. The Fused Silica Etch is designed for deep etching of fused silica, quartz, and glass.
Process List
- uk_submicron etch
- Standard thin film oxide etch, ~2600Å/min
- Fused Silica Etch
- Deep glass/fused silica etching, ~5000Å/min
- LNF_Polymer
- For etching polymers like polyimide ~920nm/min
