Difference between revisions of "STS APS DGRIE/Processes"

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* [[{{FULLPAGENAME}}/Fused silica etch|Fused Silica Etch]]
 
* [[{{FULLPAGENAME}}/Fused silica etch|Fused Silica Etch]]
 
*: Deep glass/fused silica etching, ~5000Å/min
 
*: Deep glass/fused silica etching, ~5000Å/min
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* [[{{FULLPAGENAME}}/LNF_Polymer|LNF_Polymer]]
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*: For etching polymers like polyimide ~920nm/min
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[[Category:RIE processes]]
 
[[Category:RIE processes]]
 
[[Category:DRIE processes]]
 
[[Category:DRIE processes]]

Latest revision as of 20:05, 22 November 2020

The primary recipes for the STS APS DGRIE are used for deep oxide/quartz/silica etching. The uk submicron etch is designed for thin-film (up to 8 μm) etching of oxide. Feature sizes can range from 100 nm to a full wafer. The Fused Silica Etch is designed for deep etching of fused silica, quartz, and glass.

Process List