Difference between revisions of "STS APS DGRIE/Processes/LNF Polymer"
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==Etch Rates== | ==Etch Rates== | ||
*Polyimide: 920 nm/min | *Polyimide: 920 nm/min | ||
| − | *Parylene: 1.3 µm/min | + | *Parylene: 1.3 µm/min (user reported) |
*Platinum: ~1.5 nm/min | *Platinum: ~1.5 nm/min | ||
*SiO<sub>2</sub>: 28 nm/min | *SiO<sub>2</sub>: 28 nm/min | ||
| − | *Aluminum: < 2 nm/min (varies with etch time; e.g. 30 sec or less is higher, ~4 nm/min) | + | *Aluminum: < 2 nm/min (varies with etch time; e.g. 30 sec or less is higher, ~4 nm/min) (user reported) |
==Parameters== | ==Parameters== | ||
Revision as of 15:35, 30 March 2022
| About this Process | |
|---|---|
| Process Details | |
| Equipment | STS APS DGRIE |
| Technology | RIE |
| Material | Polyimide |
| Mask Materials | Photoresist, SiO2, Aluminum |
| Gases Used | O2, He |
| Date Created | October 2020 |
| Authored By | Shawn Wright & Kevin Owen |
This is an O2 etch for polymers like polyimide.
Etch Rates
- Polyimide: 920 nm/min
- Parylene: 1.3 µm/min (user reported)
- Platinum: ~1.5 nm/min
- SiO2: 28 nm/min
- Aluminum: < 2 nm/min (varies with etch time; e.g. 30 sec or less is higher, ~4 nm/min) (user reported)
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 5 mTorr |
| TCP Power | 2000 W |
| Bias Power | 30 W |
| O2 Flow | 90 sccm |
| He Flow | 100 sccm |
