Difference between revisions of "STS APS DGRIE/Processes/LNF Polymer"

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(Created page with "<!-- Make sure to add any other relevant categories --> {{Infobox process |technology = RIE |material = Polyimide |mask = Photoresist, SiO<sub>2</sub>, Aluminum |gases = O<sub...")
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==Etch Rates==
==Etch Rates==
*Polyimide: 920 nm/min
*Polyimide: 920 nm/min
*SPR 220: ?? nm/min
*Aluminum: ?? nm/min
*Platinum: ~1.5 nm/min
*Platinum: ~1.5 nm/min
*SiO2: 28 nm/min

Revision as of 22:33, 28 June 2021

About this Process
Process Details
Technology RIE
Material Polyimide
Mask Materials Photoresist, SiO2, Aluminum
Gases Used O2, He
Date Created October 2020
Authored By Shawn Wright & Kevin Owen

This is an O2 etch for polymers like polyimide.

Etch Rates

  • Polyimide: 920 nm/min
  • Platinum: ~1.5 nm/min
  • SiO2: 28 nm/min


Parameter Main Etch
Pressure 5 mTorr
TCP Power 2000 W
Bias Power 30 W
O2 Flow 90 sccm
He Flow 100 sccm