Difference between revisions of "STS APS DGRIE/Processes/LNF Polymer"

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==Etch Rates==
 
==Etch Rates==
 
*Polyimide: 920 nm/min
 
*Polyimide: 920 nm/min
 +
*Parylene: 1.3 µm/min
 
*Platinum: ~1.5 nm/min
 
*Platinum: ~1.5 nm/min
 
*SiO2: 28 nm/min
 
*SiO2: 28 nm/min

Revision as of 14:11, 18 February 2022


About this Process
Process Details
Equipment STS APS DGRIE
Technology RIE
Material Polyimide
Mask Materials Photoresist, SiO2, Aluminum
Gases Used O2, He
Date Created October 2020
Authored By Shawn Wright & Kevin Owen

This is an O2 etch for polymers like polyimide.


Etch Rates

  • Polyimide: 920 nm/min
  • Parylene: 1.3 µm/min
  • Platinum: ~1.5 nm/min
  • SiO2: 28 nm/min

Parameters

Parameter Main Etch
Pressure 5 mTorr
TCP Power 2000 W
Bias Power 30 W
O2 Flow 90 sccm
He Flow 100 sccm