Difference between revisions of "STS APS DGRIE/Processes/LNF Polymer"

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*Parylene: 1.3 µm/min
 
*Parylene: 1.3 µm/min
 
*Platinum: ~1.5 nm/min
 
*Platinum: ~1.5 nm/min
*SiO2: 28 nm/min
+
*SiO<sub>2</sub>: 28 nm/min
 +
*Aluminum: < 2 nm/min (varies with etch time; e.g. 30 sec or less is higher, ~4 nm/min)
  
 
==Parameters==
 
==Parameters==

Revision as of 15:34, 30 March 2022


About this Process
Process Details
Equipment STS APS DGRIE
Technology RIE
Material Polyimide
Mask Materials Photoresist, SiO2, Aluminum
Gases Used O2, He
Date Created October 2020
Authored By Shawn Wright & Kevin Owen

This is an O2 etch for polymers like polyimide.


Etch Rates

  • Polyimide: 920 nm/min
  • Parylene: 1.3 µm/min
  • Platinum: ~1.5 nm/min
  • SiO2: 28 nm/min
  • Aluminum: < 2 nm/min (varies with etch time; e.g. 30 sec or less is higher, ~4 nm/min)

Parameters

Parameter Main Etch
Pressure 5 mTorr
TCP Power 2000 W
Bias Power 30 W
O2 Flow 90 sccm
He Flow 100 sccm