STS APS DGRIE/Processes/LNF Polymer
LNF Polymer is an O2 based plasma etch for thin film polymers (e.g. polyimide, parylene).
| About this Process | |
|---|---|
| Process Details | |
| Equipment | STS APS DGRIE |
| Technology | RIE |
| Material | Polyimide |
| Mask Materials | Photoresist, SiO2, Aluminum |
| Gases Used | O2, He |
| Date Created | October 2020 |
| Authored By | Shawn Wright & Kevin Owen |
Contents
Procedure
Follow the instructions in the tool operating procedure and select LNF Polymer from the supported processes folder.
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 5 mTorr |
| ICP Power | 2000 W |
| Bias Power | 30 W |
| O2 Flow | 90 sccm |
| He Flow | 100 sccm |
Characterization
Etch Rate
- Polyimide: 920 nm/min
- SPR 220: 963 nm/min
- Parylene: 1.3 µm/min (user reported)
Uniformity
Not tested.
Mask selectivity
- Platinum: ~1.5 nm/min
- SiO2: 28 nm/min
- Aluminum: < 2 nm/min (varies with etch time; e.g. 30 sec or less is higher, ~4 nm/min) (user reported)
Limitations
Oxygen plasmas are predominantly isotropic; the specific isotropy ratio has not been measured for this process. Standard photoresist masks are not recommended, since they are polymers and will also etch quickly with this process. However, there are limitations to what type of hard mask is acceptable, so please create a helpdesk ticket to discuss your process with a tool engineer.
Qualification
None at this time.