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STS APS DGRIE/Processes/LNF Polymer

< STS APS DGRIE‎ | Processes
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This is an O2 etch for polymers like polyimide.

About this Process
Process Details
Equipment STS APS DGRIE
Technology RIE
Material Polyimide
Mask Materials Photoresist, SiO2, Aluminum
Gases Used O2, He
Date Created October 2020
Authored By Shawn Wright & Kevin Owen


Etch Rates

  • Polyimide: 920 nm/min
  • SPR 220: ?? nm/min
  • Aluminum: ?? nm/min
  • Platinum: ~1.5 nm/min


Parameters

Parameter Main Etch
Pressure 5 mTorr
TCP Power 2000 W
Bias Power 30 W
O2 Flow 90 sccm
He Flow 100 sccm