Difference between revisions of "STS APS DGRIE/Processes/uk submicron etch"
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{{Infobox process | {{Infobox process | ||
|image = | |image = | ||
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|authors = SPTS, [[User:Kjvowen|Kevin Owen]] | |authors = SPTS, [[User:Kjvowen|Kevin Owen]] | ||
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The '''{{SUBPAGENAME}}''' is designed for thin-film (up to 8 μm) etching of [[silicon dioxide]]. Etch rate up to 2600 Å/min, depending on feature size. The etch exhibits extremely vertical sidewalls and can achieve down to 100 nm feature resolution. | The '''{{SUBPAGENAME}}''' is designed for thin-film (up to 8 μm) etching of [[silicon dioxide]]. Etch rate up to 2600 Å/min, depending on feature size. The etch exhibits extremely vertical sidewalls and can achieve down to 100 nm feature resolution. | ||
==Procedure== | ==Procedure== | ||
| − | Follow the SOP as shown on the [[{{ | + | Follow the SOP as shown on the [[{{ROOTPAGENAME}}]] page and choose the ''uk_submicron etch''. |
==Characterization== | ==Characterization== | ||
| − | + | [[File:Uk_submicron_2um.jpg|thumbnail]] | |
| + | [[File:Uk_submicron_1um.jpg|thumbnail]] | ||
===Etch/Dep Rate=== | ===Etch/Dep Rate=== | ||
| − | Etch rate is feature size dependent - smaller features will etch slower than larger ones. Bulk etch rate is approximately | + | Etch rate is feature size dependent - smaller features will etch slower than larger ones. Bulk etch rate is approximately 2500 Å/min. The etch exhibits minimal [[loading]] effect. |
| + | |||
| + | * Thermal oxide: 2450 Å/min | ||
| + | * GSI Oxide 200C: 3500 Å/min | ||
| + | * GSI Oxide 350C: 3000 Å/min | ||
| + | * GSI Oxide 350 thin: 2900 Å/min | ||
| + | |||
| + | {{note|These values were last updated on Feb 25, 2019. For the most recent values for thermal oxide, please see the qualification section below.}} | ||
===Uniformity=== | ===Uniformity=== | ||
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===Mask Selectivity=== | ===Mask Selectivity=== | ||
| − | The etch rate of [[SPR 220]] is approximately | + | The etch rate of [[SPR 220]] is approximately 1600 A/min (selectivity 1.5:1). Selectivity will be lower on smaller features, due to the decrease in oxide etch rate. This is the etch rate on a 6" wafer. Selectivity may be lower on samples/wafers mounted to a carrier due to increased sample heating. |
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| + | * [[SPR 200]]: 1600 Å/min (selectivity 1.5:1) | ||
| + | * [[PMMA]]: approximately 1800 Å/min (selectivity ~1.3:1). | ||
| + | * Stoichiometric [[LPCVD]] [[silicon nitride]] (Si3N4): 1750 Å/min (selectivity 1.4:1). | ||
| + | * GSI nitride 200C: 2400 Å/min | ||
| + | * Poly-Si: 450 Å/min | ||
==Limitations== | ==Limitations== | ||
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|url=https://docs.google.com/spreadsheets/d/1Z7exxRgQS92mqxQBqHo7MwRHYQXVszPzD8WyrJB9870/pubchart?oid=1969686906&format=interactive | |url=https://docs.google.com/spreadsheets/d/1Z7exxRgQS92mqxQBqHo7MwRHYQXVszPzD8WyrJB9870/pubchart?oid=1969686906&format=interactive | ||
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Latest revision as of 15:23, 29 March 2022
| About this Process | |
|---|---|
| Process Details | |
| Equipment | STS APS DGRIE |
| Technology | RIE |
| Material | SiO2 |
| Mask Materials | SPR 220, KMPR, Polysilicon |
| Gases Used | C4F8, He |
| Date Created | 5/21/2011 |
| Authored By | SPTS, Kevin Owen |
The uk submicron etch is designed for thin-film (up to 8 μm) etching of silicon dioxide. Etch rate up to 2600 Å/min, depending on feature size. The etch exhibits extremely vertical sidewalls and can achieve down to 100 nm feature resolution.
Contents
Procedure
Follow the SOP as shown on the STS APS DGRIE page and choose the uk_submicron etch.
Characterization
Etch/Dep Rate
Etch rate is feature size dependent - smaller features will etch slower than larger ones. Bulk etch rate is approximately 2500 Å/min. The etch exhibits minimal loading effect.
- Thermal oxide: 2450 Å/min
- GSI Oxide 200C: 3500 Å/min
- GSI Oxide 350C: 3000 Å/min
- GSI Oxide 350 thin: 2900 Å/min
Uniformity
Etch uniformity is < 1% across a 6" wafer.
Mask Selectivity
The etch rate of SPR 220 is approximately 1600 A/min (selectivity 1.5:1). Selectivity will be lower on smaller features, due to the decrease in oxide etch rate. This is the etch rate on a 6" wafer. Selectivity may be lower on samples/wafers mounted to a carrier due to increased sample heating.
- SPR 200: 1600 Å/min (selectivity 1.5:1)
- PMMA: approximately 1800 Å/min (selectivity ~1.3:1).
- Stoichiometric LPCVD silicon nitride (Si3N4): 1750 Å/min (selectivity 1.4:1).
- GSI nitride 200C: 2400 Å/min
- Poly-Si: 450 Å/min
Limitations
The etch may be run for a maximum of 30 minutes.
Qualification
The bulk oxide etch rate is tested after each maintenance (every 1-2 weeks) by running a 2 min etch on an oxide coated 6" wafer and measured at 25 points around the wafer.
