Difference between revisions of "STS APS DGRIE/Processes/uk submicron etch"

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The '''{{SUBPAGENAME}}''' is designed for thin-film (up to 8 μm) etching of [[silicon dioxide]]. Etch rate up to 2600 Å/min, depending on feature size.  The etch exhibits extremely vertical sidewalls and can achieve down to 100 nm feature resolution.
 
The '''{{SUBPAGENAME}}''' is designed for thin-film (up to 8 μm) etching of [[silicon dioxide]]. Etch rate up to 2600 Å/min, depending on feature size.  The etch exhibits extremely vertical sidewalls and can achieve down to 100 nm feature resolution.
  

Revision as of 15:08, 18 August 2015


About this Process
Process Details
Equipment STS APS DGRIE
Technology RIE
Material SiO2
Mask Materials SPR 220, KMPR, Polysilicon
Gases Used C4F8, He
Date Created 5/21/2011
Authored By SPTS, Kevin Owen


The uk submicron etch is designed for thin-film (up to 8 μm) etching of silicon dioxide. Etch rate up to 2600 Å/min, depending on feature size. The etch exhibits extremely vertical sidewalls and can achieve down to 100 nm feature resolution.

Procedure

Follow the SOP as shown on the STS APS DGRIE page and choose the uk_submicron etch.

Characterization

Detailed characterization data for the etch can be found here.

Etch/Dep Rate

Etch rate is feature size dependent - smaller features will etch slower than larger ones. Bulk etch rate is approximately 2600 Å/min. The etch exhibits minimal loading effect.

Uniformity

Etch uniformity is < 1% across a 6" wafer.

Mask Selectivity

The etch rate of SPR 220 is approximately 100 nm/min, giving a selectivity of ~2.5:1. Selectivity will be lower on smaller features, due to the decrease in oxide etch rate.

Limitations

The etch may be run for a maximum of 30 minutes.

Qualification

The bulk oxide etch rate is tested after each maintenance (every 1-2 weeks) by running a 2 min etch on an oxide coated 6" wafer and measured at 25 points around the wafer.