STS APS DGRIE/Processes/uk submicron etch
|Warning:||This page has not been released yet.|
|About this Process|
|Equipment||STS APS DGRIE|
|Mask Materials||SPR 220, KMPR, Polysilicon|
|Gases Used||C4F8, He|
|Authored By||SPTS, Kevin Owen|
The STS APS DGRIE/Processes/uk submicron etch is designed for thin-film (up to 8 μm) etching of silicon dioxide. Etch rate up to 2600 Å/min, depending on feature size. The etch exhibits extremely vertical sidewalls and can achieve down to 100 nm feature resolution.
Follow the SOP as shown on the STS APS DGRIE/Processes page and choose the uk_submicron etch.
Detailed characterization data for the etch can be found here.
Etch rate is feature size dependent - smaller features will etch slower than larger ones. Bulk etch rate is approximately 2600 Å/min. The etch exhibits minimal loading effect.
Etch uniformity is < 1% across a 6" wafer.
The etch rate of SPR 220 is approximately 100 nm/min, giving a selectivity of ~2.5:1. Selectivity will be lower on smaller features, due to the decrease in oxide etch rate.
The etch may be run for a maximum of 30 minutes.
The bulk oxide etch rate is tested after each maintenance (every 1-2 weeks) by running a 2 min etch on an oxide coated 6" wafer and measured at 25 points around the wafer.