STS APS DGRIE/Processes/uk submicron etch
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| About this Process | |
|---|---|
| Process Details | |
| Equipment | STS APS DGRIE |
| Technology | RIE |
| Material | SiO2 |
| Mask Materials | SPR 220, KMPR, Polysilicon |
| Gases Used | C4F8, He |
| Date Created | 5/21/2011 |
| Authored By | SPTS, Kevin Owen |
The uk submicron etch is designed for thin-film (up to 8 μm) etching of silicon dioxide. Etch rate up to 2600 Å/min, depending on feature size. The etch exhibits extremely vertical sidewalls and can achieve down to 100 nm feature resolution.
Contents
Procedure
Follow the SOP as shown on the STS APS DGRIE page and choose the uk_submicron etch.
Characterization
Detailed characterization data for the etch can be found here.
Etch/Dep Rate
Etch rate is feature size dependent - smaller features will etch slower than larger ones. Bulk etch rate is approximately 2600 Å/min. The etch exhibits minimal loading effect.
Uniformity
Etch uniformity is < 1% across a 6" wafer.
Mask Selectivity
The etch rate of SPR 220 is approximately 100 nm/min, giving a selectivity of ~2.5:1. Selectivity will be lower on smaller features, due to the decrease in oxide etch rate.
Limitations
The etch may be run for a maximum of 30 minutes.
Qualification
The bulk oxide etch rate is tested after each maintenance (every 1-2 weeks) by running a 2 min etch on an oxide coated 6" wafer and measured at 25 points around the wafer.
