Difference between revisions of "STS Pegasus 4"

From LNF Wiki
Jump to navigation Jump to search
Line 1: Line 1:
{{#vardefine:toolid|14021}} {{#vardefine:technology|DRIE}} {{#vardefine:restriction|2}}
+
{{#vardefine:toolid|14021}} {{#vardefine:technology|DRIE}} {{#vardefine:restriction|2}}{{infobox equipment
{{infobox equipment
 
 
|manufacturer = [http://www.spts.com/ SPTS Technologies Ltd.]
 
|manufacturer = [http://www.spts.com/ SPTS Technologies Ltd.]
 
|model = Pegasus
 
|model = Pegasus
Line 14: Line 13:
 
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
 
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
 
}}
 
}}
The [[{{PAGENAME}}|SPTS Pegasus 4]] is a [[DRIE|Deep Reactive Ion Etch (DRIE)]] tool used to etch 4" (100 mm) silicon wafers using the Bosch process.  It has a high power [[Reactive ion etching#Inductively coupled|ICP]] source and is capable of fast (over 20 μm/min), high aspect ratio (up to 100:1) [[Isotropy|anisotropic]] etching of [[silicon]].  Fast-acting, high precision MFCs and VAT pendulum valve and a high capacity turbo pump provide fast switching times (down to 1s), enabling reduced undercut and sidewall roughness.  Sub-micron feature etching has been demonstrated (down to 100 nm linewidth).  Etch rate varies with feature size and density, so a characterization run is strongly recommended with any new mask.
+
The [[{{PAGENAME}}]] is a [[DRIE|Deep Reactive Ion Etch (DRIE)]] tool manufactured by [http://www.spts.com/ SPTS Technologies]. It is used for fast, high aspect ratio anisotropic etching of 4" (100 mm) [[silicon]] wafers using the [https://patents.google.com/patent/US5501893A/en Bosch] process.  It is also capable of slow, controlled etching with minimal undercut, sidewall roughness, and notching; sub-micron feature etching has been demonstrated down to 100 nm linewidth.  Etch rate varies with feature size and density, so a characterization run is strongly recommended with any new mask.
  
 
==Announcements==
 
==Announcements==
Line 53: Line 52:
  
 
* RF
 
* RF
** 5 kW, 13.56 Mhz Coil
+
** 5 kW, 13.56 Mhz [[Reactive ion etching#Inductively coupled|ICP]] coil
** 300 W, 13.56 Mhz Platen
+
** 300 W, 13.56 Mhz platen
** 500 W, 380 kHz Platen with Pulsed Power Supply
+
** 500 W, 380 kHz platen with pulsed power supply
** 10 A Chamber Outer Electromagnet
+
** 10 A inner electromagnet
** 30 A Chamber Outer Electromagnet
+
** 30 A outer electromagnet
  
 
===Substrate Requirements===
 
===Substrate Requirements===

Revision as of 18:09, 15 March 2021

STS Pegasus 4
14021.jpg
Equipment Details
Manufacturer SPTS Technologies Ltd.
Model Pegasus
Technology DRIE
Materials Restriction Semi-Clean
Material Processed Si
Mask Materials PR, SiO2
Sample Size 100 mm
Gases Used Ar, C4F8, O2, SF6
Equipment Manual
Overview System Overview
Operating Procedure SOP
Supported Processes Supported Processes
User Processes User Processes
Maintenance Maintenance


The STS Pegasus 4 is a Deep Reactive Ion Etch (DRIE) tool manufactured by SPTS Technologies. It is used for fast, high aspect ratio anisotropic etching of 4" (100 mm) silicon wafers using the Bosch process. It is also capable of slow, controlled etching with minimal undercut, sidewall roughness, and notching; sub-micron feature etching has been demonstrated down to 100 nm linewidth. Etch rate varies with feature size and density, so a characterization run is strongly recommended with any new mask.

Announcements

  • [2019-05-10] - Semi-annual maintenance
    • LNF Recipe 1: 6.08 um/min
    • LNF Recipe 2: 16.47 um/min
    • LNF Recipe 3: 16.99 um/min

Capabilities

  • High etch rates ~15 µm/min
  • Nearly vertical sidewalls ~89°
  • High selectivity to photoresist and SiO2

System Overview

Hardware Details

  • Gases
    • High Precision Fast Acting Chamber Mounted MFC's
      • C4F8 - 400 sccm
      • SF6 - 1200 sccm
      • O2 - 200 sccm
    • Standard Gasbox Mounted MFC
      • Ar - 283 sccm
  • Pressure
    • 1550 L/sec Mag 2000 CTS Turbo Pump
    • 2-250 mTorr
    • Fast acting VAT pendulum valve
      • Allows fast switching of BOSCH recipes (~1.5 seconds minimum)
  • Chuck
    • 100 mm Wafer
    • 0-20 Torr Backside He Cooling
    • -20°C to 20°C
  • Chamber
    • 120°C Walls
    • Aluminum Walls
  • RF
    • 5 kW, 13.56 Mhz ICP coil
    • 300 W, 13.56 Mhz platen
    • 500 W, 380 kHz platen with pulsed power supply
    • 10 A inner electromagnet
    • 30 A outer electromagnet

Substrate Requirements

  • 100 mm (4") wafers
  • If the etch will leave less than 100 µm remaining, a carrier wafer must be used
  • Sample/carrier must be conductive, or a semiconductor for wafer to clamp on electrostatic chuck
    • Pyrex glass with an Si layer on top has worked

Material Restrictions

The STS Pegasus 4 is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Supported Processes

The primary recipes for the STS Pegasus 4 are used for deep silicon etching. There are four main Bosch process recipes with varying properties. The tool also has an oxynitride etch that may be used to etch a mask layer prior to the Si etch, but this may be performed by other tools more effectively. There is also a thinning recipe designed to quickly etch a wafer without a mask. More details on supported processes can be found on the Processes page.

In addition to these, this tool has a number of user-created recipes for specific processes. Some of these recipes are documented on STS Pegasus 4 User Processes. For more information, please contact the tool engineers via the helpdesk ticket system.

Standard Operating Procedure

Widget text will go here.

Checkout Procedure

Follow this procedure to receive authorization to run supported processes. Practicing with an authorized user or staff member prior to checkout is strongly encouraged.

  1. Complete the sample mounting course. If you have already completed this for another tool, you do not need to complete it again.
  2. Read through the User Manual above.
  3. Accurately complete the checkout quiz. You may retake as necessary until all answers are correct.
  4. Complete the training request form.
  5. Create a helpdesk ticket requesting a checkout session.
  6. Authorization will be provided pending successful completion of the quiz and demonstration of proper tool use in the presence of a tool engineer.

Maintenance

In order to provide reliable operating conditions, maintenance is performed regularly on the tool including inspecting and cleaning the chamber. The following regular maintenance is performed on the STS Pegasus 4:

  • Weekly
    • General tool check
    • Qualification wafer run
    • Check wafer centering
  • Monthly
    • Wipe down chamber walls
    • Clean process kit, clamping ring
    • Plasma clean and condition
  • Annually
    • Change and clean source ceramics
  • Biennially
    • Refurbish turbo pump
    • Clean APC valve, foreline valve, baratron valve

After any chamber maintenance, the etch rate of the standard recipes is checked, as described below.

LNF Recipe 1, 2, 3

To verify the condition of the tool an etch is performed on recipe 1, 2 and 3, rotating each week. The etch rate is measured on a 100 μm wide trench in 5 locations. The average of this is shown below.