STS Pegasus 4
|STS Pegasus 4|
|Manufacturer||SPTS Technologies Ltd.|
|Mask Materials||PR, SiO2|
|Sample Size||100 mm|
|Gases Used||Ar, C4F8, O2, SF6|
|Supported Processes||Supported Processes|
|User Processes||User Processes|
The STS Pegasus 4 is a Deep Reactive Ion Etch (DRIE) tool manufactured by SPTS Technologies. It is used for fast, high aspect ratio anisotropic etching of 4" (100 mm) silicon wafers using the Bosch process. It is also capable of slow, controlled etching with minimal undercut, sidewall roughness, and notching; sub-micron feature etching has been demonstrated down to 100 nm linewidth. Etch rate varies with feature size and density, so a characterization run is strongly recommended with any new mask.
- [2019-05-10] - Semi-annual maintenance
- LNF Recipe 1: 6.08 um/min
- LNF Recipe 2: 16.47 um/min
- LNF Recipe 3: 16.99 um/min
- High etch rates ~15 µm/min
- Nearly vertical sidewalls ~89°
- High selectivity to photoresist and SiO2
- 1550 L/sec Mag 2000 CTS Turbo Pump
- 2-250 mTorr
- Fast acting VAT pendulum valve
- Allows fast switching of BOSCH recipes (~1.5 seconds minimum)
- 100 mm Wafer
- 0-20 Torr Backside He Cooling
- -20°C to 20°C
- 120°C Walls
- Aluminum Walls
- 5 kW, 13.56 Mhz ICP coil
- 300 W, 13.56 Mhz platen
- 500 W, 380 kHz platen with pulsed power supply
- 10 A inner electromagnet
- 30 A outer electromagnet
- 100 mm (4") wafers
- Pieces can be mounted to a carrier wafer at the Sample mounting station
- If the etch will leave less than 100 µm remaining, a carrier wafer must be used
- Sample/carrier must be conductive, or a semiconductor for wafer to clamp on electrostatic chuck
- Pyrex glass with an Si layer on top has worked
The STS Pegasus 4 is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email email@example.com for any material requests or questions.
The primary recipes for the STS Pegasus 4 are used for deep silicon etching. There are four main Bosch process recipes with varying properties. The tool also has an oxynitride etch that may be used to etch a mask layer prior to the Si etch, but this may be performed by other tools more effectively. There is also a thinning recipe designed to quickly etch a wafer without a mask. More details on supported processes can be found on the Processes page.
In addition to these, this tool has a number of user-created recipes for specific processes. Some of these recipes are documented on STS Pegasus 4 User Processes. For more information, please contact the tool engineers via the helpdesk ticket system.
Standard Operating Procedure
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Follow this procedure to receive authorization to run supported processes. Practicing with an authorized user or staff member prior to checkout is strongly encouraged.
- Complete the sample mounting course. If you have already completed this for another tool, you do not need to complete it again.
- Read through the User Manual above.
- Accurately complete the checkout quiz. You may retake as necessary until all answers are correct.
- Complete the training request form.
- Create a helpdesk ticket requesting a checkout session.
- Authorization will be provided pending successful completion of the quiz and demonstration of proper tool use in the presence of a tool engineer.
In order to provide reliable operating conditions, maintenance is performed regularly on the tool including inspecting and cleaning the chamber. The following regular maintenance is performed on the STS Pegasus 4:
- General tool check
- Qualification wafer run
- Check wafer centering
- Wipe down chamber walls
- Clean process kit, clamping ring
- Plasma clean and condition
- Change and clean source ceramics
- Refurbish turbo pump
- Clean APC valve, foreline valve, baratron valve
After any chamber maintenance, the etch rate of the standard recipes is checked, as described below.
LNF Recipe 1, 2, 3
To verify the condition of the tool an etch is performed on recipe 1, 2 and 3, rotating each week. The etch rate is measured on a 100 μm wide trench in 5 locations. The average of this is shown below.