STS Pegasus 4/Processes

This page lists the processes supported by the LNF for the STS Pegasus 4.

The primary recipes for the STS Pegasus 4 are used for deep silicon etching. Recipe 1 is optimized for clean sidewalls, while Recipe 2 and 3 allow for faster etches. The tool has an oxynitride etch that may be used to etch oxide or nitride but this may be performed by other tools more effectively, such as the P5000 RIE. There is also a LNF Thinning recipe designed to quickly etch a wafer without a mask.

Process List

• STS Pegasus 4/Processes/LNF Recipe 1

  This recipe is designed for etching relatively small (1-100 μm) features with a vertical, smooth sidewall and minimal undercut. Etch rates depend on feature size and vary from 2-6 μm/min.

• STS Pegasus 4/Processes/LNF Recipe 2

  This recipe is designed for deep and through wafer etching of small (1-500 μm) features on masks with a low exposed area (<20%). Undercut and scalloping is larger than LNF Recipe 1, but etch rates are higher (4-13 μm/min).

• STS Pegasus 4/Processes/LNF Recipe 3

  This recipe is designed for deep and through wafer etching particularly on masks with a large exposed area (>20%). Undercut and scalloping is larger than LNF Recipe 1, but etch rates are higher (4-16 μm/min).

• STS Pegasus 4/Processes/LNF Recipe 4

  This highly specialized recipe is designed for high aspect ratio etching of small features (1-10 μm) with very low open area (<10%). The etch produces the most vertical sidewall with the least undercut, particularly at the top of the trench.

• STS Pegasus 4/Processes/LNF Oxynitride LF

  This recipe is for etching oxide and nitride. It is primarily useful for native oxide removal prior to a deep Si etch, but can also be used for definition of an oxide mask for etching.

  There are significantly better tools for etching oxide and nitride that should be considered before using this recipe. Please create a helpdesk ticket or email info@lnf.umich.edu if you have further questions.