Difference between revisions of "STS Pegasus 4/Processes"

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The primary recipes for the STS Pegasus 4 are used for deep silicon etching.  Recipe 1 is optimized for clean sidewalls, while Recipe 2 and 3 allow for faster etches.  The tool has an oxynitride etch that may be used to etch oxide or nitride but this may be performed by other tools more effectively, such as the [[P5000 RIE]].  There is also a LNF Thinning recipe designed to quickly etch a wafer without a mask.
 
The primary recipes for the STS Pegasus 4 are used for deep silicon etching.  Recipe 1 is optimized for clean sidewalls, while Recipe 2 and 3 allow for faster etches.  The tool has an oxynitride etch that may be used to etch oxide or nitride but this may be performed by other tools more effectively, such as the [[P5000 RIE]].  There is also a LNF Thinning recipe designed to quickly etch a wafer without a mask.
  
==Process List==
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==Bosch Process Recipes==
 
* [[{{FULLPAGENAME}}/LNF Recipe 1]]
 
* [[{{FULLPAGENAME}}/LNF Recipe 1]]
 
*: This recipe is designed for etching relatively small (1-100 μm) features with a vertical, smooth sidewall and minimal undercut. Etch rates depend on feature size and vary from 2-6 μm/min.
 
*: This recipe is designed for etching relatively small (1-100 μm) features with a vertical, smooth sidewall and minimal undercut. Etch rates depend on feature size and vary from 2-6 μm/min.
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* [[{{FULLPAGENAME}}/LNF Recipe 4]]
 
* [[{{FULLPAGENAME}}/LNF Recipe 4]]
 
*: This highly specialized recipe is designed for high aspect ratio etching of small features (1-10 μm) with very low open area (<10%). The etch produces the most vertical sidewall with the least undercut, particularly at the top of the trench.
 
*: This highly specialized recipe is designed for high aspect ratio etching of small features (1-10 μm) with very low open area (<10%). The etch produces the most vertical sidewall with the least undercut, particularly at the top of the trench.
* [[{{FULLPAGENAME}}/LNF Oxynitride LF]]
 
*: This recipe is for etching oxide and nitride. It is primarily useful for native oxide removal prior to a deep Si etch, but can also be used for definition of an oxide mask for etching.
 
*: {{note|This recipe is no longer officially supported by the LNF. There are significantly better tools for etching oxide and nitride that should be considered before using this recipe. Please create a helpdesk ticket or email [mailto:info@lnf.umich.edu info@lnf.umich.edu] if you have further questions.}}
 
  
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==Other Silicon Etch Recipes==
* [[{{FULLPAGENAME}}/LNF Thinning Slow]]
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* [[{{FULLPAGENAME}}/LNF Si Thinning 1]]
 +
*: This recipe is intended for isotropic thinning of Si wafers for device release. It does not have high uniformity, but has good selectivity to other materials.
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* [[{{FULLPAGENAME}}/LNF Si Thinning 2]]
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*: This recipe is intended for isotropic thinning of Si wafers for device release. It does not have high uniformity.
 +
* [[{{FULLPAGENAME}}/LNF Switched Poly]]
 
*: This recipe is...
 
*: This recipe is...
* [[{{FULLPAGENAME}}/LNF Thinning Fast]]
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* [[{{FULLPAGENAME}}/LNF Unswitched Poly]]
 
*: This recipe is...
 
*: This recipe is...
-->
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 +
==Support Recipes==
 +
* [[{{FULLPAGENAME}}/LNF Ar Descum]]
 +
*: This recipe uses an Ar plasma to anisotropically and indiscriminately remove a thin layer of any material on the surface of the sample. It is intended as a combination of photoresist descum and native oxide removal prior to Si etching. This recipe is already included in all of the standard recipes.
 +
*: {{note|Maximum etch time is 2 min.|reminder}}
 +
* [[{{FULLPAGENAME}}/LNF O2 Descum]]
 +
*: This recipe is uses an O<sub>2</sub> plasma to isotropically remove polymers. It is intended as a photoresist descum prior to etching, although it may oxidize the exposed surface. The Ar descum is better suited for normal circumstances. This recipe may also be used for photoresist mask stripping post process, although there are other systems at the LNF with better performance for this process.
 +
*: {{note|Maximum etch time is 5 min.|reminder}}
 +
* [[{{FULLPAGENAME}}/LNF Oxynitride LF]]
 +
*: This recipe is for etching oxide and nitride. It is primarily useful for native oxide removal prior to a deep Si etch, but can also be used for definition of an oxide mask for etching.
 +
*: {{note|This recipe is not officially maintained by the LNF. There are significantly better tools for etching oxide and nitride that should be considered before using this recipe. Please create a helpdesk ticket or email [mailto:info@lnf.umich.edu info@lnf.umich.edu] if you have further questions.|reminder}}
  
 
[[Category:{{#var:technology}} processes]]
 
[[Category:{{#var:technology}} processes]]

Revision as of 11:49, 19 November 2020


This page lists the processes supported by the LNF for the STS Pegasus 4.

The primary recipes for the STS Pegasus 4 are used for deep silicon etching. Recipe 1 is optimized for clean sidewalls, while Recipe 2 and 3 allow for faster etches. The tool has an oxynitride etch that may be used to etch oxide or nitride but this may be performed by other tools more effectively, such as the P5000 RIE. There is also a LNF Thinning recipe designed to quickly etch a wafer without a mask.

Bosch Process Recipes

  • STS Pegasus 4/Processes/LNF Recipe 1
    This recipe is designed for etching relatively small (1-100 μm) features with a vertical, smooth sidewall and minimal undercut. Etch rates depend on feature size and vary from 2-6 μm/min.
  • STS Pegasus 4/Processes/LNF Recipe 2
    This recipe is designed for deep and through wafer etching of small (1-500 μm) features on masks with a low exposed area (<20%). Undercut and scalloping is larger than LNF Recipe 1, but etch rates are higher (4-13 μm/min).
  • STS Pegasus 4/Processes/LNF Recipe 3
    This recipe is designed for deep and through wafer etching particularly on masks with a large exposed area (>20%). Undercut and scalloping is larger than LNF Recipe 1, but etch rates are higher (4-16 μm/min).
  • STS Pegasus 4/Processes/LNF Recipe 4
    This highly specialized recipe is designed for high aspect ratio etching of small features (1-10 μm) with very low open area (<10%). The etch produces the most vertical sidewall with the least undercut, particularly at the top of the trench.

Other Silicon Etch Recipes

Support Recipes

  • STS Pegasus 4/Processes/LNF Ar Descum
    This recipe uses an Ar plasma to anisotropically and indiscriminately remove a thin layer of any material on the surface of the sample. It is intended as a combination of photoresist descum and native oxide removal prior to Si etching. This recipe is already included in all of the standard recipes.
    Maximum etch time is 2 min.
  • STS Pegasus 4/Processes/LNF O2 Descum
    This recipe is uses an O2 plasma to isotropically remove polymers. It is intended as a photoresist descum prior to etching, although it may oxidize the exposed surface. The Ar descum is better suited for normal circumstances. This recipe may also be used for photoresist mask stripping post process, although there are other systems at the LNF with better performance for this process.
    Maximum etch time is 5 min.
  • STS Pegasus 4/Processes/LNF Oxynitride LF
    This recipe is for etching oxide and nitride. It is primarily useful for native oxide removal prior to a deep Si etch, but can also be used for definition of an oxide mask for etching.
    This recipe is not officially maintained by the LNF. There are significantly better tools for etching oxide and nitride that should be considered before using this recipe. Please create a helpdesk ticket or email info@lnf.umich.edu if you have further questions.