STS Pegasus 4/Processes/LNF Ar Descum
|Warning:||This page has not been released yet.|
|About this Process|
|Equipment||STS Pegasus 4|
|Authored By||Kevin Owen|
LNF Ar Descum uses an Ar plasma to anisotropically and indiscriminately remove a thin layer of any material on the surface of the sample. It is intended as a combination of photoresist descum and native oxide removal prior to Si etching. This recipe is already included in all of the standard recipes.
LNF Ar Descum is included as the first process step in all standard processes, so it is not typically necessary to run as a standalone process.
|Bias Power (LF)||W||80|
Etch rate and uniformity
|Silicon dioxide||100 Å/min||13%|
|SPR 220||190 Å/min||8%|
This recipe is intended for blanket descum of the wafer surface, so a mask is not necessary.
Maximum allowed etch time is 2 min.