STS Pegasus 4/Processes/LNF Ar Descum
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| About this Process | |
|---|---|
| Process Details | |
| Equipment | STS Pegasus 4 |
| Technology | RIE |
| Material | all |
| Mask Materials | none |
| Gases Used | Argon |
| Date Modified | 7/25/2017 |
| Authored By | Kevin Owen |
LNF Ar Descum uses an Ar plasma to anisotropically and indiscriminately remove a thin layer of any material on the surface of the sample. It is intended as a combination of photoresist descum and native oxide removal prior to Si etching. This recipe is already included in all of the standard recipes.
Contents
Procedure
LNF Ar Descum is included as the first process step in all standard processes, so it is not typically necessary to run as a standalone process.
The maximum etch time allowed for this process is 2 minutes.
Parameters
| Parameter | Units | Setpoint |
|---|---|---|
| ICP Power | W | 2000 |
| Bias Power (LF) | W | 80 |
| Bias Pulsing | none | |
| Pressure | mTorr | 5 |
| Ar Flow | sccm | 100 |
Capabilities
Etch rate and uniformity
All of the etch rates below (with the exception of photoresist) are characterized using LPCVD or thermal furnace films.
| Material | Etch Rate | Uniformity |
|---|---|---|
| Silicon dioxide | 100 Å/min | 13% |
| Silicon nitride | 110 Å/min | 11% |
| Low stress nitride | 115 Å/min | 10% |
| Silicon | 135 Å/min | 20% |
| SPR 220 | 190 Å/min | 8% |
Mask Selectivity
This recipe is intended for blanket descum of the wafer surface, so a mask is not necessary.
Limitations
Maximum allowed etch time is 2 min.
