STS Pegasus 4/Processes/LNF Ar Descum
LNF Ar Descum uses an Ar plasma to anisotropically and indiscriminately remove a thin layer of any material on the surface of the sample. It is intended as a combination of photoresist descum and native oxide removal prior to Si etching. This recipe is already included in all of the standard recipes.
|About this Process|
|Equipment||STS Pegasus 4|
|Authored By||Kevin Owen|
LNF Ar Descum is included as the first process step in all standard processes, so it is not typically necessary to run as a standalone process.
|Bias Power (LF)||W||80|
Etch rate and uniformity
All of the etch rates below (with the exception of photoresist) are characterized using LPCVD or thermal furnace films.
|Silicon dioxide||100 Å/min||13%|
|Silicon nitride||110 Å/min||11%|
|Low stress nitride||115 Å/min||10%|
|SPR 220||190 Å/min||8%|
This recipe is intended for blanket descum of the wafer surface, so a mask is not necessary.
Maximum allowed etch time is 2 min.