Difference between revisions of "STS Pegasus 4/Processes/LNF O2 Descum"
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| 15 Å/min
| 15 Å/min
Revision as of 16:04, 11 February 2021
|Warning:||This page has not been released yet.|
|About this Process|
|Equipment||STS Pegasus 4|
LNF O2 Descum uses an O2 plasma to isotropically remove polymers. It is intended as a photoresist descum prior to etching, although it may oxidize expose surfaces. The LNF Ar Descum is better suited for normal circumstances. This recipe may also be used for photoresist mask stripping post process, although there are other systems at the LNF with better performance for this process.
Follow the standard operating procedure. This recipe may also be added as an additional step within another recipe. Create a helpdesk ticket for assistance.
|Bias Power (LF)||W||75|
Etch rate and uniformity
All of the etch rates below (with the exception of photoresist) are characterized using LPCVD or thermal furnace films.
|SPR 220||7800 Å/min||6%|
|Silicon dioxide||30 Å/min||5%|
|Silicon nitride||22 Å/min||5%|
|Low stress nitride||20 Å/min||5%|
This recipe is intended for blanket descum of the wafer surface, so a mask is not necessary.
Maximum allowed etch time is 5 min.