Difference between revisions of "STS Pegasus 4/Processes/LNF O2 Descum"

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Revision as of 15:31, 22 November 2020

Warning Warning: This page has not been released yet.
About this Process
Process Details
Equipment STS Pegasus 4
Technology RIE
Material all
Mask Materials none
Gases Used O2


LNF O2 Descum uses an O2 plasma to isotropically remove polymers. It is intended as a photoresist descum prior to etching, although it may oxidize expose surfaces. The LNF Ar Descum is better suited for normal circumstances. This recipe may also be used for photoresist mask stripping post process, although there are other systems at the LNF with better performance for this process.

Procedure

Follow the standard operating procedure. This recipe may also be added as an additional step within another recipe. Create a helpdesk ticket for assistance.

The maximum etch time allowed for this process is 5 minutes.

Parameters

Parameter Units Setpoint
ICP Power W 2500
Bias Power (LF) W 75
Bias Pulsing Hz none
Pressure mTorr 20
O2 Flow sccm 200
Ar Flow sccm 100

Capabilities

Etch rate and uniformity

Material Etch Rate Uniformity
SPR 220 7800 Å/min 6%
Silicon dioxide 30 Å/min 5%
Silicon nitride ? ?
Silicon ? ?

Mask Selectivity

This recipe is intended for blanket descum of the wafer surface, so a mask is not necessary.

Limitations

Maximum allowed etch time is 5 min.