Difference between revisions of "STS Pegasus 4/Processes/LNF Oxynitride LF"

From LNF Wiki
Jump to navigation Jump to search
Line 11: Line 11:
 
}}
 
}}
  
The '''{{SUBPAGENAME}}''' is a recipe on the STS Pegasus 4 and 6 that may be used to etch [[silicon dioxide]] and [[silicon nitride]]. Because the tool is not designed for this process, it also etches [[silicon]] and [[photoresist]] at a similar rate. It is primarily useful for native oxide removal prior to a deep Si etch. For oxide film etching, such as preparing an etch mask, the [[STS Glass Etcher]] and [[P5000 RIE]] have far superior performance and are strongly recommended.
+
The '''{{SUBPAGENAME}}''' is a legacy recipe on the STS Pegasus 4 and 6 that may be used to etch [[silicon dioxide]] and [[silicon nitride]]. Because the tool is not designed for this process, it also etches [[silicon]] and [[photoresist]] at a similar rate. It is primarily useful for native oxide removal prior to a deep Si etch. For oxide film etching, such as preparing an etch mask, the [[STS Glass Etcher]] and [[P5000 RIE]] have far superior performance and are strongly recommended. Furthermore, it is no longer supported by the LNF.
  
 
==Procedure==
 
==Procedure==

Revision as of 08:25, 28 August 2018

About this Process
Oxynitride lf.jpg
Process Details
Equipment STS Pegasus 4
Technology RIE
Material Si, SiO2, Si3N4
Mask Materials Photoresist
Gases Used SF6, C4F8, Ar
Date Created 10/10/2012
Authored By Brian Vanderelzen



The LNF Oxynitride LF is a legacy recipe on the STS Pegasus 4 and 6 that may be used to etch silicon dioxide and silicon nitride. Because the tool is not designed for this process, it also etches silicon and photoresist at a similar rate. It is primarily useful for native oxide removal prior to a deep Si etch. For oxide film etching, such as preparing an etch mask, the STS Glass Etcher and P5000 RIE have far superior performance and are strongly recommended. Furthermore, it is no longer supported by the LNF.

Procedure

Follow the SOP outlined on the tool page. Run LNF Oxynitride LF for up to 20 minutes with the 1 minute automated clean recipe, longer etches should be run with the 3 minute automated clean recipe.

Parameters

Parameter Units Setpoint
ICP Power W ?
Bias Power W 100?
Bias Pulsing Hz 40 Hz - 80%
Pressure mTorr 10?
C4F8 Flow sccm ?
SF6 Flow sccm ?
Ar Flow sccm ?

Capabilities

Widget text will go here.

Limitations

This process is not recommended for most etch processes. There are other RIE tools in the lab with much better performance for oxide and nitride etching with higher selectivity to silicon and photoresist. Please create a helpdesk ticket or email info@lnf.umich.edu if you have further questions.