Difference between revisions of "STS Pegasus 4/Processes/LNF Oxynitride LF"
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|created = 10/10/2012 | |created = 10/10/2012 | ||
|modified = | |modified = | ||
| − | |authors = Brian Vanderelzen | + | |authors = Brian Vanderelzen}} |
| − | }} | ||
| − | The '''{{SUBPAGENAME}}''' is a legacy recipe on the STS Pegasus 4 and 6 that may be used to etch [[silicon dioxide]] and [[silicon nitride]]. Because the tool is not designed for this process, it also etches [[silicon]] and [[photoresist]] at a similar rate. It is primarily useful for native oxide removal prior to a deep Si etch. For oxide film etching, such as preparing an etch mask, the [[STS Glass Etcher]] and [[P5000 RIE]] have far superior performance and are strongly recommended. | + | The '''{{SUBPAGENAME}}''' is a legacy recipe on the STS Pegasus 4 and 6 that may be used to etch [[silicon dioxide]] and [[silicon nitride]]. Because the tool is not designed for this process, it also etches [[silicon]] and [[photoresist]] at a similar rate. It is primarily useful for native oxide removal prior to a deep Si etch. For oxide film etching, such as preparing an etch mask, the [[STS Glass Etcher]] and [[P5000 RIE]] have far superior performance and are strongly recommended. It is not actively supported by the LNF. |
==Procedure== | ==Procedure== | ||
| Line 53: | Line 52: | ||
==Capabilities== | ==Capabilities== | ||
| + | ===Etch rate=== | ||
| + | |||
| + | |||
{{#widget:GoogleDoc|key=1yqSjYF8tcYfcoZ1v9daYVE4_P1JiAR0VRcNdNly0jFE}} | {{#widget:GoogleDoc|key=1yqSjYF8tcYfcoZ1v9daYVE4_P1JiAR0VRcNdNly0jFE}} | ||
<!-- | <!-- | ||
===Etch rate=== | ===Etch rate=== | ||
| + | {| class="wikitable" border="1" style="text-align: center" | ||
| + | |- | ||
| + | ! Material | ||
| + | ! Etch Rate | ||
| + | ! Uniformity | ||
| + | ! Profile | ||
| + | |- | ||
| + | | Silicon dioxide | ||
| + | | 1090 Å/min | ||
| + | | 5.1% | ||
| + | | ? | ||
| + | |- | ||
| + | | Silicon nitride | ||
| + | | ? | ||
| + | | ? | ||
| + | | ? | ||
| + | |- | ||
| + | | Silicon | ||
| + | | ? | ||
| + | | ? | ||
| + | | ? | ||
| + | |- | ||
| + | | SPR 220 | ||
| + | | 1520 Å/min | ||
| + | | 5.9% | ||
| + | | ? | ||
| + | |} | ||
===Uniformity=== | ===Uniformity=== | ||
Revision as of 14:12, 18 November 2020
| About this Process | |
|---|---|
 | |
| Process Details | |
| Equipment | STS Pegasus 4 |
| Technology | RIE |
| Material | Si, SiO2, Si3N4 |
| Mask Materials | Photoresist |
| Gases Used | SF6, C4F8, Ar |
| Date Created | 10/10/2012 |
| Authored By | Brian Vanderelzen |
The LNF Oxynitride LF is a legacy recipe on the STS Pegasus 4 and 6 that may be used to etch silicon dioxide and silicon nitride. Because the tool is not designed for this process, it also etches silicon and photoresist at a similar rate. It is primarily useful for native oxide removal prior to a deep Si etch. For oxide film etching, such as preparing an etch mask, the STS Glass Etcher and P5000 RIE have far superior performance and are strongly recommended. It is not actively supported by the LNF.
Procedure
Follow the SOP outlined on the tool page. Run LNF Oxynitride LF for up to 20 minutes with the 1 minute automated clean recipe, longer etches should be run with the 3 minute automated clean recipe.
Parameters
| Parameter | Units | Setpoint |
|---|---|---|
| ICP Power | W | ? |
| Bias Power | W | 100? |
| Bias Pulsing | Hz | 40 Hz - 80% |
| Pressure | mTorr | 10? |
| C4F8 Flow | sccm | ? |
| SF6 Flow | sccm | ? |
| Ar Flow | sccm | ? |
Capabilities
Etch rate
Widget text will go here.
Limitations
This process is not recommended for most etch processes. There are other RIE tools in the lab with much better performance for oxide and nitride etching with higher selectivity to silicon and photoresist. Please create a helpdesk ticket or email info@lnf.umich.edu if you have further questions.
