Difference between revisions of "STS Pegasus 4/Processes/LNF Oxynitride LF"
| Line 24: | Line 24: | ||
| ICP Power | | ICP Power | ||
| W | | W | ||
| − | | | + | | 1000 |
|- | |- | ||
| Bias Power | | Bias Power | ||
| W | | W | ||
| − | | 100 | + | | 100 |
|- | |- | ||
| Bias Pulsing | | Bias Pulsing | ||
| Hz | | Hz | ||
| − | | 40 Hz - | + | | 40 Hz - 50% |
|- | |- | ||
| Pressure | | Pressure | ||
| mTorr | | mTorr | ||
| − | | 10 | + | | 10 |
|- | |- | ||
| C<sub>4</sub>F<sub>8</sub> Flow | | C<sub>4</sub>F<sub>8</sub> Flow | ||
| sccm | | sccm | ||
| − | | | + | | 100 |
|- | |- | ||
| SF<sub>6</sub> Flow | | SF<sub>6</sub> Flow | ||
| sccm | | sccm | ||
| − | | | + | | 30 |
|- | |- | ||
| Ar Flow | | Ar Flow | ||
| sccm | | sccm | ||
| − | | | + | | 100 |
|} | |} | ||
Revision as of 16:33, 22 November 2020
| About this Process | |
|---|---|
 | |
| Process Details | |
| Equipment | STS Pegasus 4 |
| Technology | RIE |
| Material | Si, SiO2, Si3N4 |
| Mask Materials | Photoresist |
| Gases Used | SF6, C4F8, Ar |
| Date Created | 10/10/2012 |
| Authored By | Brian Vanderelzen |
The LNF Oxynitride LF is a legacy recipe on the STS Pegasus 4 and 6 that may be used to etch silicon dioxide and silicon nitride. Because the tool is not designed for this process, it also etches silicon and photoresist at a similar rate. It is primarily useful for native oxide removal prior to a deep Si etch. For oxide film etching, such as preparing an etch mask, the STS Glass Etcher and P5000 RIE have far superior performance and are strongly recommended. It is not actively maintained by the LNF.
Procedure
Follow the SOP outlined on the tool page. LNF Oxynitride LF should not be run for longer than 30 min.
Parameters
| Parameter | Units | Setpoint |
|---|---|---|
| ICP Power | W | 1000 |
| Bias Power | W | 100 |
| Bias Pulsing | Hz | 40 Hz - 50% |
| Pressure | mTorr | 10 |
| C4F8 Flow | sccm | 100 |
| SF6 Flow | sccm | 30 |
| Ar Flow | sccm | 100 |
Capabilities
Etch rate
| Material | Etch Rate | Uniformity | Profile |
|---|---|---|---|
| Silicon dioxide | 1090 Å/min | 5.1% | ? |
| Silicon nitride | ? | ? | ? |
| Silicon | ? | ? | ? |
| SPR 220 | 1520 Å/min | 5.9% | ? |
Process Report
Widget text will go here.
Limitations
This process is not recommended for most etch processes. There are other RIE tools in the lab with much better performance for oxide and nitride etching with higher selectivity to silicon and photoresist. Please create a helpdesk ticket or email info@lnf.umich.edu if you have further questions.
