STS Pegasus 4/Processes/LNF Oxynitride LF
 Warning: | This page has not been released yet. |
| About this Process | |
|---|---|
| Process Details | |
| Equipment | STS Pegasus 4 |
| Technology | RIE |
| Material | Si, SiO2, Si3N4 |
| Mask Materials | Photoresist |
| Gases Used | SF6, C4F8, Ar |
| Date Created | 10/10/2012 |
| Authored By | Brian Vanderelzen |
The LNF Oxynitride LF is a recipe on the STS Pegasus 4 and 6 that may be used to etch silicon dioxide and silicon nitride. Because the tool is not designed for this process, it also etches silicon and photoresist at a similar rate. It is primarily useful for native oxide removal prior to a deep Si etch, but can also be used for definition of an oxide mask for etching.
Procedure
Follow the SOP outlined on the tool page. Run LNF Oxynitride LF for up to 20 minutes with the 1 minute automated clean recipe, longer etches should be run with the 3 minute automated clean recipe.
Parameters
| Parameter | Units | Setpoint |
|---|---|---|
| ICP Power | W | ? |
| Bias Power | W | 100? |
| Bias Pulsing | Hz | 40 Hz - 80% |
| Pressure | mTorr | 10? |
| C4F8 Flow | sccm | ? |
| SF6 Flow | sccm | ? |
| Ar Flow | sccm | ? |
Capabilities
Widget text will go here.
Limitations
This process is not recommended for most etch processes. There are other RIE tools in the lab with much better performance for oxide and nitride etching with higher selectivity to silicon and photoresist. Please create a helpdesk ticket or email info@lnf.umich.edu if you have further questions.
