STS Pegasus 4/Processes/LNF Oxynitride LF
|Warning:||This page has not been released yet.|
|About this Process|
|Equipment||STS Pegasus 4|
|Material||Si, SiO2, Si3N4|
|Gases Used||SF6, C4F8, Ar|
|Authored By||Brian Vanderelzen|
The LNF Oxynitride LF is a recipe on the STS Pegasus 4 and 6 that may be used to etch silicon dioxide and silicon nitride. Because the tool is not designed for this process, it also etches silicon and photoresist at a similar rate. It is primarily useful for native oxide removal prior to a deep Si etch, but can also be used for definition of an oxide mask for etching.
Follow the SOP outlined on the tool page. Run LNF Oxynitride LF for up to 20 minutes with the 1 minute automated clean recipe, longer etches should be run with the 3 minute automated clean recipe.
|Bias Pulsing||Hz||40 Hz - 80%|
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This process is not recommended for most etch processes. There are other RIE tools in the lab with much better performance for oxide and nitride etching with higher selectivity to silicon and photoresist. Please create a helpdesk ticket or email firstname.lastname@example.org if you have further questions.