Difference between revisions of "STS Pegasus 4/Processes/LNF Recipe 3"

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|authors = Kevin Owen
 
|authors = Kevin Owen
 
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Recipe 2 is the XXX
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Recipe 3 is the XXX
  
 
==Procedure==
 
==Procedure==
 
<!-- Insert the SOP on the process here -->
 
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Run LNF Recipe 2 for up to 20 minutes with the 1 minute automated clean recipe, longer etches should be run with the 3 minute automated clean recipe.
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Run LNF Recipe 3 for up to 20 minutes with the 1 minute automated clean recipe, longer etches should be run with the 3 minute automated clean recipe.
  
 
==Recipe Parameters==
 
==Recipe Parameters==
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The etch rate will vary with the size of the trench being etched.  Larger trenches tend to etch faster, this trend can be seen below.
 
The etch rate will vary with the size of the trench being etched.  Larger trenches tend to etch faster, this trend can be seen below.
 
<gallery mode="packed" heights="300px">
 
<gallery mode="packed" heights="300px">
File:STS_Pegasus_4_Recipe_2_Etch_Rate.jpg|Recipe 1 Etch Rate vs. Feature Size
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File:STS_Pegasus_4_Recipe_3_Etch_Rate.jpg|Recipe 1 Etch Rate vs. Feature Size
 
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===Side Profile===
 
===Side Profile===
 
====Trench====
 
====Trench====
Running recipe 2 for 20 minutes with 3 µm of [[SPR 220]] on a silicon wafer with our standard DRIE characterization mask can produce a profile like this.
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Running recipe 3 for 20 minutes with 3 µm of [[SPR 220]] on a silicon wafer with our standard DRIE characterization mask can produce a profile like this.
 
<gallery mode="packed-hover"  heights="200px">
 
<gallery mode="packed-hover"  heights="200px">
File:STS Pegasus_4_Recipe_2_2_um.jpg|Recipe 2 for 20 min, 2 µm Trench
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File:STS Pegasus_4_Recipe_3_2_um.jpg|Recipe 3 for 20 min, 2 µm Trench
File:STS Pegasus_4_Recipe_2_10_um.jpg|Recipe 2 for 20 min, 10 µm Trench
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File:STS Pegasus_4_Recipe_3_10_um.jpg|Recipe 3 for 20 min, 10 µm Trench
File:STS Pegasus_4_Recipe_2_100_um.jpg|Recipe 2 for 20 min, 100 µm Trench
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File:STS Pegasus_4_Recipe_3_100_um.jpg|Recipe 3 for 20 min, 100 µm Trench
 
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==Qualification==
 
==Qualification==
 
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<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
Every third Friday Recipe 2 is run for 10 minutes on a Si wafer with our standard DRIE characterization mask, with 3 µm of [[SPR 220]].  This is performed after the weekly clean, and a 100 µm trench is measured in 5 locations with the [[Zygo NewView 5000]].  This etch rate is reported in the chart below.
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Every third Friday Recipe 3 is run for 10 minutes on a Si wafer with our standard DRIE characterization mask, with 3 µm of [[SPR 220]].  This is performed after the weekly clean, and a 100 µm trench is measured in 5 locations with the [[Zygo NewView 5000]].  This etch rate is reported in the chart below.
  
 
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Revision as of 11:07, 15 January 2015

Warning Warning: This page has not been released yet.
About this Process
Process Details
Equipment STS Pegasus 4
Technology RIE
Material Si
Mask Materials PR, SiO2
Date Created Jan 1, 2011
Authored By Kevin Owen


Recipe 3 is the XXX

Procedure

Run LNF Recipe 3 for up to 20 minutes with the 1 minute automated clean recipe, longer etches should be run with the 3 minute automated clean recipe.

Recipe Parameters

Parameter Dep Etch
ICP Power W W
Bias Power W W
Bias Pulsing
Pressure mTorr mTorr
C4F8 Flow sccm sccm
SF6 Flow sccm sccm
O2 Flow sccm sccm
Time s s

Characterization

Etch Rate

The etch rate will vary with the size of the trench being etched. Larger trenches tend to etch faster, this trend can be seen below.

Mask Selectivity

  • Photoresist Etch Rate
  • SiO2 Etch Rate
    • Thermal oxide/HTO: A/min
    • LTO: A/min
    • PECVD: unknown

Side Profile

Trench

Running recipe 3 for 20 minutes with 3 µm of SPR 220 on a silicon wafer with our standard DRIE characterization mask can produce a profile like this.

Grassing

An example of grassing can be seen below. This can happen if XXX

Limitations

Etch Length

Feature Size

Aspect ratio

Open area

Multi-step etching

  • Multi-step processing (i.e. running two or more etches with overlapping features) with the Bosch process is known to cause undesirable results. Please contact the tool engineers if you wish to run such a process so we can help reduce or eliminate issues.

Qualification

Every third Friday Recipe 3 is run for 10 minutes on a Si wafer with our standard DRIE characterization mask, with 3 µm of SPR 220. This is performed after the weekly clean, and a 100 µm trench is measured in 5 locations with the Zygo NewView 5000. This etch rate is reported in the chart below.