STS Pegasus 4/Processes/LNF Recipe 3
|Warning:||This page has not been released yet.|
|About this Process|
|Equipment||STS Pegasus 4|
|Mask Materials||PR, SiO2|
|Date Created||Jan 1, 2011|
|Authored By||Kevin Owen|
Recipe 2 is the XXX
Run LNF Recipe 2 for up to 20 minutes with the 1 minute automated clean recipe, longer etches should be run with the 3 minute automated clean recipe.
The etch rate will vary with the size of the trench being etched. Larger trenches tend to etch faster, this trend can be seen below.
- Photoresist Etch Rate
- SPR 220: A/min
- SiO2 Etch Rate
- Thermal oxide/HTO: A/min
- LTO: A/min
- PECVD: unknown
Running recipe 2 for 20 minutes with 3 µm of SPR 220 on a silicon wafer with our standard DRIE characterization mask can produce a profile like this.
An example of grassing can be seen below. This can happen if XXX
- Multi-step processing (i.e. running two or more etches with overlapping features) with the Bosch process is known to cause undesirable results. Please contact the tool engineers if you wish to run such a process so we can help reduce or eliminate issues.
Every third Friday Recipe 2 is run for 10 minutes on a Si wafer with our standard DRIE characterization mask, with 3 µm of SPR 220. This is performed after the weekly clean, and a 100 µm trench is measured in 5 locations with the Zygo NewView 5000. This etch rate is reported in the chart below.