STS Pegasus 4/Processes/LNF Recipe 4
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About this Process | |
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Process Details | |
Equipment | STS Pegasus 4 |
Technology | DRIE |
Material | Si |
Mask Materials | PR, SiO2 |
Gases Used | SF6, C4F8, O2 |
Date Created | Jan 1, 2011 |
Authored By | Kevin Owen |
This highly specialized recipe is designed for high aspect ratio etching of small features (1-10 μm) with very low open area (<10%). The etch produces the most vertical sidewall with the least undercut, particularly at the top of the trench.
Contents
Procedure
Run LNF Recipe 4 for up to 20 minutes with the 1 minute automated clean recipe, longer etches should be run with the 3 minute automated clean recipe.
Recipe Parameters
Parameter | Dep | Etch | |
---|---|---|---|
Boost | Main | ||
ICP Power | 2000 W | 2500 W | |
Bias Power | 0 W | 80-100 W | 30 W |
Bias Pulsing | N/A | 40 Hz - 80% | |
Pressure | 25 mTorr | 30 mTorr | |
C4F8 Flow | 90-140 sccm | 0 sccm | |
SF6 Flow | 0 sccm | 110 sccm | |
O2 Flow | 0 sccm | 10 sccm | |
Time | 2.5 s | 3 s | 4 s |
Temperature | 10 C |
Characterization
Etch Rate
The etch rate will vary with the size of the trench being etched. Larger trenches tend to etch faster, this trend can be seen below.
Mask Selectivity
- Photoresist Etch Rate
- SPR 220: 600 A/min
- Thermal oxide/HTO: unknown
Side Profile
Trench
Running recipe 4 for 20 minutes with 3 µm of SPR 220 on a silicon wafer with our standard DRIE characterization mask can produce a profile like this. The minimum trench size is 0.24 µm.
Scallop
- 80 nm wide X 300 nm tall
Undercut
- 225 nm
Grassing
An example of grassing can be seen below. This can happen if there is too much exposed area (>25%) on the mask.
Limitations
Etch Length
Feature Size
Aspect ratio
Open area
Multi-step etching
- Multi-step processing (i.e. running two or more etches with overlapping features) with the Bosch process is known to cause undesirable results. Please contact the tool engineers if you wish to run such a process so we can help reduce or eliminate issues.
Qualification
Currently Recipe 4 is not routinely qualified.