STS Pegasus 4/Processes/LNF Si Thinning 1
|Warning:||This page has not been released yet.|
LNF Si Thinning 1 is an SF6 based process intended for isotropic thinning of Si wafers for device release. It does not have high uniformity, but has good selectivity to other materials.
|About this Process|
|Equipment||STS Pegasus 4|
|Mask Materials||not typical|
Follow the standard operating procedure.
|ICP Power||0 W||2800 W|
|Bias Power (HF)||0 W||5 W|
|SF6 Flow||0 sccm||450 sccm|
|O2 Flow||0 sccm||45 sccm|
|Ar Flow||200 sccm|
|Time||40 s||20 s|
* Dep step is used as a cooldown (no plasma) for temperature control.
This recipe is only characterized for blanket etching (no mask, 100% loading) on a 100 mm wafer. Etch rate will change for different loading areas or sample sizes.
This recipe is intended for blanket etching, however a few common materials are included, as they may be used as an etch stop or for certain unusual processes.
|Silicon dioxide||? Å/min||?%|
|SPR 220||130 Å/min||26%|
The etch profile is not characterized, as it is intended as a blanket etch. However, the process is considered isotropic.
This etch is designed to generate minimal heat and includes a cooldown cycle, therefore it is capable of running for long periods of time without risking damage to samples. However, the standard operating procedure should be followed: in particular, for etches longer than 60 min, you must create a helpdesk to work with a tool engineer. It is not sufficient to simnply split the etch into multiple segments.
For any etches that require a carrier wafer per the guidelines in the SOP, it is required that 100 mm samples are mounted to a 150 mm wafer and processed in the STS Pegasus 6 to prevent particulate from falling onto the chuck.