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STS Pegasus 4/Processes/LNF Si Thinning 2

< STS Pegasus 4‎ | Processes

LNF Si Thinning 2 (previously known as LNF si thinning etch - slow 1) is an SF6 based process intended for isotropic thinning of Si wafers for device release.

About this Process
Process Details
Equipment STS Pegasus 4
Technology RIE
Material Silicon
Mask Materials not typical
Gases Used SF6, Ar



Follow the standard operating procedure.


Parameter Units Setpoint
ICP Power W 600
Bias Power (HF) W 30
Pressure mTorr 15
SF6 Flow sccm 300
Ar Flow sccm 100
Chuck Temperature °C 10


Etch rate

This recipe is only characterized for blanket etching (no mask, 100% loading) on a 100 mm wafer. Etch rate will change for different loading areas or sample sizes.

Material Etch Rate Uniformity
Silicon 3.5 µm/min 3.6%

Mask selectivity

This recipe is intended for blanket etching, however a few common materials are included, as they may be used as an etch stop or for certain unusual processes.

Material Etch Rate Uniformity
Silicon dioxide 240 Å/min 7%
Silicon nitride 700 Å/min 2%
Low stress nitride 590 Å/min 2%
SPR 220 860 Å/min 2%

Etch profile

The etch profile is not characterized, as it is intended as a blanket etch. However, the process is considered isotropic.


Etch length

This etch is designed to generate minimal heat and therefore is capable of running for long periods of time without risking damage to samples. However, the standard operating procedure should be followed: in particular, for etches longer than 60 min, you must create a helpdesk to work with a tool engineer. It is not sufficient to simnply split the etch into multiple segments.

Etch depth

For any etches that require a carrier wafer per the guidelines in the SOP, it is required that 100 mm samples are mounted to a 150 mm wafer and processed in the STS Pegasus 6 to prevent particulate from falling onto the chuck.