Difference between revisions of "STS Pegasus 4/Processes/LNF Switched Poly"

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| Pressure
 
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Revision as of 12:34, 22 November 2020

Warning Warning: This page has not been released yet.
About this Process
Process Details
Equipment STS Pegasus 4
Technology RIE
Material Silicon
Mask Materials not typical
Chemicals Used PR, SiO2
Gases Used SF6, C4F8, O2


LNF Switched Poly is a Bosch-style switched process intended for shallow silicon and thin film poly- and amorphous silicon etches.

Procedure

Follow the standard operating procedure.

Parameters

Parameter Dep Etch
ICP Power 800 W 800 W
Bias Power 0 W 20 W
Bias Pulsing N/A 100 Hz 80%
Pressure 10 mTorr 10 mTorr
C4F8 Flow 150 sccm 120 sccm
SF6 Flow 0 sccm 200 sccm
Time 1 s 1.65 s

Capabilities

Etch rate

Etch rate will vary with feature size and loading.

Material Etch Rate Uniformity
Silicon ? µm/min ?%

Mask selectivity

Material Etch Rate Uniformity
Silicon dioxide 31 Å/min 18%
Silicon nitride ? ?
SPR 220 110 Å/min 8%

Etch profile

Unknown.

Limitations

Etch length

This etch is designed for thin films and shallow etches. It is not characterized for long processes.

Feature size

Unknown

Open area

Unknown