Difference between revisions of "STS Pegasus 4/Processes/LNF Switched Poly"
< STS Pegasus 4 | Processes
Jump to navigation
Jump to search
| Line 53: | Line 53: | ||
| 1 s | | 1 s | ||
| 1.65 s | | 1.65 s | ||
| + | |- | ||
| + | | Chuck Temperature | ||
| + | |colspan="2" | 20°C | ||
|} | |} | ||
Revision as of 12:35, 22 November 2020
 Warning: | This page has not been released yet. |
| About this Process | |
|---|---|
| Process Details | |
| Equipment | STS Pegasus 4 |
| Technology | RIE |
| Material | Silicon |
| Mask Materials | not typical |
| Chemicals Used | PR, SiO2 |
| Gases Used | SF6, C4F8, O2 |
LNF Switched Poly is a Bosch-style switched process intended for shallow silicon and thin film poly- and amorphous silicon etches.
Contents
Procedure
Follow the standard operating procedure.
Parameters
| Parameter | Dep | Etch |
|---|---|---|
| ICP Power | 800 W | 800 W |
| Bias Power | 0 W | 20 W |
| Bias Pulsing | N/A | 100 Hz 80% |
| Pressure | 10 mTorr | 10 mTorr |
| C4F8 Flow | 150 sccm | 120 sccm |
| SF6 Flow | 0 sccm | 200 sccm |
| Time | 1 s | 1.65 s |
| Chuck Temperature | 20°C | |
Capabilities
Etch rate
Etch rate will vary with feature size and loading.
| Material | Etch Rate | Uniformity |
|---|---|---|
| Silicon | ? µm/min | ?% |
Mask selectivity
| Material | Etch Rate | Uniformity |
|---|---|---|
| Silicon dioxide | 31 Å/min | 18% |
| Silicon nitride | ? | ? |
| SPR 220 | 110 Å/min | 8% |
Etch profile
Unknown.
Limitations
Etch length
This etch is designed for thin films and shallow etches. It is not characterized for long processes.
Feature size
Unknown
Open area
Unknown
