STS Pegasus 4/Processes/LNF Switched Poly

From LNF Wiki
< STS Pegasus 4‎ | Processes
Revision as of 20:40, 19 November 2020 by Kjvowen (talk | contribs) (Created page with "<!-- Make sure to add any other relevant categories --> {{#ifeq: {{NAMESPACE}} | Template | | Category:Processes}} {{warning|This page has not been released yet.}} {{Infob...")
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search
Warning Warning: This page has not been released yet.
About this Process
Process Details
Equipment STS Pegasus 4
Technology RIE
Material Silicon
Mask Materials not typical
Chemicals Used PR, SiO2
Gases Used SF6, C4F8, O2

LNF Switched Poly is a Bosch-style switched process intended for shallow silicon and thin film poly- and amorphous silicon etches.


Follow the standard operating procedure.


Parameter Dep Etch
ICP Power ? W ? W
Bias Power 0 W ? W
Bias Pulsing N/A ?
Pressure ? ?
C4F8 Flow ? sccm 0 sccm
SF6 Flow 0 sccm ? sccm
O2 Flow 0 sccm ? sccm
Time ? s ? s


Etch rate

Etch rate will vary with feature size and loading.

Material Etch Rate Uniformity
Silicon ? µm/min ?%

Mask selectivity

Material Etch Rate Uniformity
Silicon dioxide 31 Å/min 18%
Silicon nitride ? ?
SPR 220 110 Å/min 8%

Etch profile



Etch length

This etch is designed for thin films and shallow etches. It is not characterized for long processes.

Feature size


Open area