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STS Pegasus 4/Processes/LNF Switched Poly

< STS Pegasus 4‎ | Processes
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LNF Switched Poly is a Bosch-style switched process intended for shallow silicon and thin film poly- and amorphous silicon etches.

About this Process
Process Details
Equipment STS Pegasus 4
Technology RIE
Material Silicon
Mask Materials not typical
Chemicals Used PR, SiO2
Gases Used SF6, C4F8, O2


Contents

Procedure

Follow the standard operating procedure.

Parameters

Parameter Dep Etch
ICP Power 800 W 800 W
Bias Power 0 W 20 W
Bias Pulsing N/A 100 Hz 80%
Pressure 10 mTorr 10 mTorr
C4F8 Flow 150 sccm 120 sccm
SF6 Flow 0 sccm 200 sccm
Time 1 s 1.65 s

Capabilities

Etch rate

Etch rate will vary with feature size and loading.

Material Etch Rate Uniformity
Silicon ? µm/min ?%

Mask selectivity

Material Etch Rate Uniformity
Silicon dioxide 31 Å/min 18%
Silicon nitride ? ?
SPR 220 110 Å/min 8%

Etch profile

Unknown.

Limitations

Etch length

This etch is designed for thin films and shallow etches. It is not characterized for long processes.

Feature size

Unknown

Open area

Unknown